Magneto-optical signature of massless Kane electrons in Cd3As2

We report on optical reflectivity experiments performed on Cd3As2 over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.Comment: 5 pages, 4 figures + supplementary materials (17 pages), to be published in Phys. Rev. Let

Volkov-Pankratov states in topological heterojunctions

We show that a smooth interface between two insulators of opposite topological Z2 indices possesses multiple surface states, both massless and massive. While the massless surface state is non-degenerate, chiral and insensitive to the interface potential, the massive surface states only appear for a sufficiently smooth heterojunction. The surface states are particle-hole symmetric and a voltage drop reveals their intrinsic relativistic nature, similarly to Landau bands of Dirac electrons in a magnetic field. We discuss the relevance of the massive Dirac surface states in recent ARPES and transport experiments

Energy scale of Dirac electrons in Cd3As2

Cadmium arsenide (Cd3As2) has recently became conspicuous in solid-state physics due to several reports proposing that it hosts a pair of symmetry-protected 3D Dirac cones. Despite vast investigations, a solid experimental insight into the band structure of this material is still missing. Here we fill one of the existing gaps in our understanding of Cd3As2, and based on our Landau-level spectroscopy study, we provide an estimate for the energy scale of 3D Dirac electrons in this system. We find that the appearance of such charge carriers is limited-contrary to a widespread belief in the solid-state community-to a relatively small energy scale (below 40 meV)

Microwave studies of the fractional Josephson effect in HgTe-based Josephson junctions

The rise of topological phases of matter is strongly connected to their potential to host Majorana bound states, a powerful ingredient in the search for a robust, topologically protected, quantum information processing. In order to produce such states, a method of choice is to induce superconductivity in topological insulators. The engineering of the interplay between superconductivity and the electronic properties of a topological insulator is a challenging task and it is consequently very important to understand the physics of simple superconducting devices such as Josephson junctions, in which new topological properties are expected to emerge. In this article, we review recent experiments investigating topological superconductivity in topological insulators, using microwave excitation and detection techniques. More precisely, we have fabricated and studied topological Josephson junctions made of HgTe weak links in contact with two Al or Nb contacts. In such devices, we have observed two signatures of the fractional Josephson effect, which is expected to emerge from topologically-protected gapless Andreev bound states. We first recall the theoretical background on topological Josephson junctions, then move to the experimental observations. Then, we assess the topological origin of the observed features and conclude with an outlook towards more advanced microwave spectroscopy experiments, currently under development.Comment: Lectures given at the San Sebastian Topological Matter School 2017, published in "Topological Matter. Springer Series in Solid-State Sciences, vol 190. Springer

Determination of the crystal field splitting energy in Cd3As2 using magnetooptics

International audienc

Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and dominate equilibrium and transport properties at high energy and/or high electric field. By monitoring the AC admittance of HgTe topological insulator field-effect capacitors, we access the compressibility and conductivity of surface states in a broad range of energy and electric fields. The Dirac surface states are characterized by a compressibility minimum, a linear energy dependence and a high mobility persisting up to energies much larger than the transport bandgap of the bulk. New features are revealed at high energies with signatures such as conductance peaks, compressibility bumps, a strong charge metastability and a Hall resistance anomaly. These features point to the existence of excited massive surface states, responsible for a strong intersubband scattering with the Dirac states and the nucleation of metastable bulk carriers. The spectrum of excited states agrees with predictions of a phenomenological model of the topological-trivial semiconductor interface. The model accounts for the finite interface depth and the effect of electric fields. The existence of excited topological states is essential for the understanding of topological phases and opens a route for engineering and exploiting topological resources in quantum technology