Generalized fractional maximal and integral operators on Orlicz and generalized Orlicz--Morrey spaces of the third kind

In the present paper, we will characterize the boundedness of the generalized fractional integral operators $I_{\rho}$ and the generalized fractional maximal operators $M_{\rho}$ on Orlicz spaces, respectively. Moreover, we will give a characterization for the Spanne-type boundedness and the Adams-type boundedness of the operators $M_{\rho}$ and $I_{\rho}$ on generalized Orlicz--Morrey spaces, respectively. Also we give criteria for the weak versions of the Spanne-type boundedness and the Adams-type boundedness of the operators $M_{\rho}$ and $I_{\rho}$ on generalized Orlicz--Morrey spaces

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.Comment: Proceedings of the 12th Asia Pacific Physics Conferenc

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.Comment: 4 pages, 3 figures, To appear in J. Appl. Phy

Non-smooth Atomic Decompositions for Generalized Orlicz-Morrey Spaces of the Third Kind

WOS: 000382700200006We deal with the generalized Orlicz-Morrey space of the third kind and consider the decomposition method. Also we characterize its predual space. Some maximal estimates for generalized Orlicz-Morrey spaces of the third kind are also obtained by using the weighted Hardy operators. As an application, we consider the Olsen inequality, which is a bilinear estimate on the fractional integral operator. As an appendix, we consider a general form of the vector-valued boundedness of the Hardy-Littlewood maximal operator, where in the definition of depends on as well. This paper contains a remedy for the mistake in the proof of the Olsen inequality of the 2014 paper by the second author (Iida et al. in Z. Anal. Anwend. 33(2):149-170, 2014).Science Development Foundation under the President of the Republic of AzerbaijanScience Development Foundation (SDF) - Azerbaijan [EIF-2013-9(15)-46/10/1]; Presidium Azerbaijan National Academy of ScienceAzerbaijan National Academy of Sciences (ANAS)The research of V. Guliyev was partially supported by the grant of Science Development Foundation under the President of the Republic of Azerbaijan, Grant EIF-2013-9(15)-46/10/1 and by the grant of Presidium Azerbaijan National Academy of Science 2015. This paper is written during the stay of Y. Sawano in Ahi Evran University. Y. Sawano is thankful to Ahi Evran University for this support of the stay there. Y. Sawano is thankful to Professor Jie Xiao for his pointing out that (7.18) is correct under some restricted conditions. The authors are thankful to Professor Mitsuo Izuki at Okayama University for his careful reading of the manuscript

Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $\alpha{}| \uparrow \downarrow >+\beta{}| \downarrow \uparrow >$ and $-\beta{}| \uparrow \downarrow > + \alpha{}| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $\alpha{}$ and $\beta{}$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.Comment: 6 pages, 5 figure