Direct simulation Monte Carlo for new regimes in aggregation-fragmentation kinetics

We revisit two basic Direct Simulation Monte Carlo Methods to model aggregation kinetics and extend them for aggregation processes with collisional fragmentation (shattering). We test the performance and accuracy of the extended methods and compare their performance with efficient deterministic finite-difference method applied to the same model. We validate the stochastic methods on the test problems and apply them to verify the existence of oscillating regimes in the aggregation-fragmentation kinetics recently detected in deterministic simulations. We confirm the emergence of steady oscillations of densities in such systems and prove the stability of the oscillations with respect to fluctuations and noise.Comment: 19 pages, 2 figures, 4 table

Identification and manipulation of tumor associated macrophages in human cancers

Evading immune destruction and tumor promoting inflammation are important hallmarks in the development of cancer. Macrophages are present in most human tumors and are often associated with bad prognosis. Tumor associated macrophages come in many functional flavors ranging from what is known as classically activated macrophages (M1) associated with acute inflammation and T-cell immunity to immune suppressive macrophages (M2) associated with the promotion of tumor growth. The role of these functionally different myeloid cells is extensively studied in mice tumor models but dissimilarities in markers and receptors make the direct translation to human cancer difficult. This review focuses on recent reports discriminating the type of infiltrating macrophages in human tumors and the environmental cues present that steer their differentiation. Finally, immunotherapeutic approaches to interfere in this process are discussed

MgZnO/AlGaN heterostructure light-emitting diodes

We report on p-n junction light-emitting diodes fabricated from MgZnO/ZnO/AlGaN/GaN triple heterostructures. Energy band diagrams of the light-emitting diode structure incorporating piezoelectric and spontaneous polarization fields were simulated, revealing a strong hole confinement near the n-ZnO/p-AlGaN interface with a hole sheet density as large as 1.82x10(13) cm(-2) for strained structures. The measured current-voltage (IV) characteristics of the triple heterostructure p-n junctions have rectifying characteristics with a turn-on voltage of similar to3.2 V. Electron-beam-induced current measurements confirmed the presence of a p-n junction located at the n-ZnO/p-AlGaN interface. Strong optical emission was observed at similar to390 nm as expected for excitonic optical transitions in these structures. Experimental spectral dependence of the photocurrent confirmed the excitonic origin of the optical transition at 390 nm. Light emission was measured up to 650 K, providing additional confirmation of the excitonic nature of the optical transitions in the devices

Studies of minority carrier diffusion length increase in p-type ZnO : Sb

Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184 +/- 10 meV. Irradiation with a low energy (5 kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219 +/- 8 meV). Both phenomena are suggested to involve a Sb-Zn-2V(Zn) acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented