Photoinduced magnetism in the ferromagnetic semiconductors

We study the enhancement of the magnetic transition temperature $T_c$ due to incident light in ferromagnetic semiconductors such as EuS. The photoexcited carriers mediate an extra ferromagnetic interaction due to the coupling with the localized magnetic moments. The Hamiltonian consists of a Heisenberg model for the localized moments and an interaction term between the photoexcited carriers and the localized moments. The model predicts a small enhancement of the transition temperature in semi-quantitative agreement with the experiments.Comment: 5 pages, 5 figure

Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction

We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitative agreement with theoretical predictions

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs

Kondo Universal Scaling for a Quantum Dot Coupled to Superconducting Leads

We study competition between the Kondo effect and superconductivity in a single self-assembled InAs quantum dot contacted with Al lateral electrodes. Due to Kondo enhancement of Andreev reflections the zero-bias anomaly develops sidepeaks, separated by the superconducting gap energy Delta. For ten valleys of different Kondo temperature T_K we tune the gap Delta with an external magnetic field. We find that the zero-bias conductance in each case collapses onto a single curve with Delta/kT_K as the only relevant energy scale, providing experimental evidence for universal scaling in this system.Comment: 4 pages, 3 figure