The domain matrix method: a new calculation scheme for diffraction profiles

A new calculation scheme for diffraction profiles is presented that combines the matrix method with domain approaches. Based on a generalized Markov chain, the method allows the exact solution of the diffraction problem from any one-dimensionally disordered domain structure. The main advantage of this model is that a domain statistic is used instead of a cell statistic and that the domain-length distribution can be chosen independently from the domain-type stacking. A recursive relation is derived for the correlations between the domains and a double recursive algorithm, not reducible to a simpler one, is obtained as solution. The algorithm developed here is referred to as the domain matrix method. Results and applications of the new approach are discussed

Source monitoring and memory confidence in schizophrenia

BACKGROUND: The present study attempted to extend previous research on source monitoring deficits in schizophrenia. We hypothesized that patients would show a bias to attribute self-generated words to an external source. Furthermore, it was expected that schizophrenic patients would be overconfident regarding false memory attributions. METHOD: Thirty schizophrenic and 21 healthy participants were instructed to provide a semantic association for 20 words. Subsequently, a list was read containing experimenter- and self-generated words as well as new words. The subject was required to identify each item as old/new, name the source. and state the degree of confidence for the source attribution. RESULTS: Schizophrenic patients displayed a significantly increased number of source attribution errors and were significantly more confident than controls that a false source attribution response was true. The latter bias was ameliorated by higher doses of neuroleptics. CONCLUSIONS: It is inferred that a core cognitive deficit underlying schizophrenia is a failure to distinguish false from true mnestic contents

Large AtA_{t} Without the Desert

Even if the unification and supersymmetry breaking scales are around $10^6$ to $10^{9}$ TeV, a large $A_t$ coupling may be entirely generated at low energies through RGE evolution in the 5D MSSM. Independent of the precise details of supersymmetry breaking, we take advantage of power law running in five dimensions and a compactification scale in the $10-10^3$ TeV range to show how the gluino mass may drive a large enough $A_t$ to achieve the required $125.5$ GeV Higgs mass. This also allows for sub-TeV stops, possibly observable at the LHC, and preserving GUT unification, thereby resulting in improved naturalness properties with respect to the four dimensional MSSM. The results apply also to models of "split families" in which the first and second generation matter fields are in the bulk and the third is on the boundary, which may assist in the generation of light stops whilst satisfying collider constraints on the first two generations of squarks.Comment: 21 pages, 21 figures. Plots updated to published version, in JHE

Scanning Photo-Induced Impedance Microscopy - Resolution studies and polymer characterization

Scanning Photo-Induced Impedance Microscopy (SPIM) is an impedance imaging technique that is based on photocurrent measurements at field-effect structures. The material under investigation is deposited onto a semiconductor-insulator substrate. A thin metal film or an electrolyte solution with an immersed electrode serves as the gate contact. A modulated light beam focused into the space charge region of the semiconductor produces a photocurrent, which is directly related to the local impedance of the material. The absolute impedance of a polymer film can be measured by calibrating photocurrents using a known impedance in series with the sample. Depending on the wavelength of light used, charge carriers are not only generated in the focus but also throughout the bulk of the semiconductor. This can have adverse effects on the lateral resolution. Two-photon experiments were carried out to confine charge carrier generation to the spacecharge layer. The lateral resolution of SPIM is also limited by the lateral diffusion of charge carriers in the semiconductor. This problem can be solved by using thin silicon layers as semiconductor substrates. A resolution of better than 1 mu m was achieved using silicon on sapphire (SOS) substrates with a I l.Lm thick silicon layer