Embryonic development and hatching of Loligo duvaucelii Orbigny (Loliginidae, Cephalopoda) in the laboratory

The egg masses and adults U common squid Loligo duvaucelii were collected cm the shore seine and from the inteitidal sandy shore at Karwar. The embryonic development and hatching of the squid was observed in the laboratoiy, Each egg mop consisted <^ many egg capsules, each of which, in turn, consisted of 125-150 eggs. Eggs were 2 mm Iraig and 1.75 ram wide and very yolky. The young ones hatched in 5 days measuring 1.83 nun in DML and 3.17 mm in total length including the arms. Mantle width wa^ 1.5S mm. The young ones survived for 5 days in the aquaiium

Mussel Farming Methods and the Prospects and Problems in India

Mussel farming has a long history that dates back to the thirteenth century. Mussels are farmed in many areas of the world with the most common species cultured being the blue mussel, Mytilus edulis. The main producers of mussels are countries such as China, Korea, Spain, Netherlands, Denmark, France and New Zealand. In 2012, 1.829 million tonnes of mussels were produced worldwide valued at 2.053 billion US Dollars (FAO). The Indian mussel production is relatively small and the production is around 10,000 tonnes for the past few years

Site suitability evaluation for bivalve mariculture in Maharashtra

The coastal stretch of Konkan Maharashtra is endowed with large number of west flowing rivers forming productive estuaries and creeks fringed by mangrove vegetation. The coastline stretching across the districts of Raigad, Ratnagiri and Sindhudurg are marked by the presence of narrow creeks offering sheltered areas for aquaculture activities. Considering the potential for expanding bivalve farming in Maharashtra, surveys for selecting suitable sites for coastal farming were conducted from 5th to 8th October, 2013 covering Thane,Raigad, Ratnagiri and Sindhudurg districts

Calculation and experimental verification of m drop in tsia electrodes of chlor-alkali cells

A computer program to analyss the current distribution in a chlor-alkali cell using Titanium Substrate Insoluble Anode (TSIA) has baen developed. The program takes into account the polarisation resistance characteristics of anode and camode and the electrolyte resistance, in a d d i i to anode nodal resistance. The results are compared with the experimental data

NEW SEPARATION AXIOMS IN

In this paper, we represents few separation axioms ar

Electrical switching studies on Ge-​Te-​Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Bulk Ge17Te83-​xTlx glasses (0 ≤ x ≤ 13)​, have been found to exhibit memory type elec. switching. The switching voltages (also known as threshold voltage - Vth) of Ge17Te83-​xTlx glasses decrease with increasing Tl content. The rate of decrease of Vth is greater at lower concns. and Vth falls at a slower rate for higher Tl concns. (x ≥ 6)​. The addn. of Tl to the Ge-​Te network fragments the covalent network and introduces ionic nature to it; the redn. in network connectivity decreases switching voltages with Tl content. The decrease in the glass transition temps. of Ge17Te83-​xTlx glasses with increasing Tl concn. supports the idea of decrease in network connectivity with Tl addn. The more metallic nature of Tl also contributes to the obsd. redn. in the switching voltages of Ge17Te83-​xTlx glasses with Tl content. Further, there is an interesting correlation seen between the threshold voltage Vth and the av. bond energy, as a function of Tl content. The switching voltages of Ge17Te83-​xTlx glasses have been found to decrease with sample thickness almost linearly. The set-​reset studies indicate that the Ge17Te81Tl2 sample can be switched for >10 cycles, whereas other glasses could not be reset beyond 2 switching cycles

High Pressure Studies on the Electrical Resistivity of Ge–Te–Tl Glasses

The variation of electrical resistivity in the system of glasses Ge17Te83−xTlx, with (1≤x≤13), has been studied as a function of high pressure for pressures up to 10 GPa. It is found that the normalized electrical resistivity decreases continuously with the increase in pressure and shows a sudden drop at a particular pressure (transition pressure), indicating the presence of a transition from semiconductor to near-metallic at these pressures which are in the range 3.0–5.0 GPa. This transition pressure is seen to decrease with the increase in the percentage content of thallium due to increasing metallicity of the thallium. The transition is reversible under application of pressure and X-ray diffraction of samples recovered after pressurization show that they remain amorphous after undergoing a pressurization decompression cycle

High pressure studies on the electrical resistivity of As–Te–bond Si glasses and the effect of network topological thresholds

The variation of resistivity in an amorphous As30Te70−x Si x system of glasses with high pressure has been studied for pressures up to 8 GPa. It is found that the electrical resistivity and the conduction activation energy decrease continuously with increase in pressure, and samples become metallic in the pressure range 1.0–2.0 GPa. Temperature variation studies carried out at a pressure of 0.92 GPa show that the activation energies lie in the range 0.16–0.18 eV. Studies on the composition/average co-ordination number ⟨ r⟩ dependence of normalized electrical resistivity at different pressures indicate that rigidity percolation is extended, the onset of the intermediate phase is around ⟨ r⟩=2.44, and completion at ⟨ r⟩=2.56, respectively, while the chemical threshold is at ⟨ r⟩=2.67. These results compare favorably with those obtained from electrical switching and differential scanning calorimetric studies

Variation of electrical resistivity with high pressure in Ge-Te-Sn glasses: A composition dependent study

The variation of normalized electrical resistivity in the system of glasses Ge_{15}Te_{85-x}Sn_{x} with (1 ≤ x ≤ 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure