5,134 research outputs found
Predictability of reset switching voltages in unipolar resistance switching
In unipolar resistance switching of NiO capacitors, Joule heating in the
conducting channels should cause a strong nonlinearity in the low resistance
state current-voltage (I-V) curves. Due to the percolating nature of the
conducting channels, the reset current IR, can be scaled to the nonlinear
coefficient Bo of the I-V curves. This scaling relationship can be used to
predict reset voltages, independent of NiO capacitor size; it can also be
applied to TiO2 and FeOy capacitors. Using this relation, we developed an error
correction scheme to provide a clear window for separating reset and set
voltages in memory operations
A decentralized proportional-integral sliding mode tracking controller for a 2 D.O.F robot arm
Trajectory tracking with high accuracy is a very challenging topic in direct drive robot control. This is due to the nonlinearities and input couplings present in the dynamics of the arm. This paper deals with the tracking control of a class of direct-drive robot manipulators. A robust Proportional-Integral (PI) sliding mode control law is derived so that the robot trajectory tracks a desired trajectory as closely as possible despite the highly non-linear and coupled dynamics. The controller is designed using the decentralized approaches. Application to a two degree of freedom direct drive robot arm is considered
Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures
We have found that there is more than one type of conducting carriers
generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier
density and mobility from optical transmission spectroscopy with those from
dc-transport measurements. When multiple types of carriers exist, optical
characterization dominantly reflects the contribution from the high-density
carriers whereas dc-transport measurements may exaggerate the contribution of
the high-mobility carriers even though they are present at low-density. Since
the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3
heterostructures are much higher than those extracted by optical method, we
attribute the origin of high-mobility transport to the low-density conducting
carriers.Comment: 3 figures, supplemental materia
Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors
under a modified piezoresponse force microscope. We obtained domain evolution
images during polarization switching process and observed that domain
nucleation occurs at particular sites. This inhomogeneous nucleation process
should play an important role in an early stage of switching and under a high
electric field. We found that the number of nuclei is linearly proportional to
log(switching time), suggesting a broad distribution of activation energies for
nucleation. The nucleation sites for a positive bias differ from those for a
negative bias, indicating that most nucleation sites are located at
ferroelectric/electrode interfaces
Bandwidth-Controlled Insulator-Metal Transition and Correlated Metallic State in 5 Transition Metal Oxides SrIrO (=1, 2, and )
We investigated the electronic structures of the 5 Ruddlesden-Popper
series SrIrO (=1, 2, and ) using optical
spectroscopy and first-principles calculations. As 5 orbitals are spatially
more extended than 3 or 4 orbitals, it has been widely accepted that
correlation effects are minimal in 5 compounds. However, we observed a
bandwidth-controlled transition from a Mott insulator to a metal as we
increased . In addition, the artificially synthesized perovskite SrIrO
showed a very large mass enhancement of about 6, indicating that it was in a
correlated metallic state
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