179 research outputs found
Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field
We report on terahertz radiation detection with InGaAs/InAlAs Field Effect
Transistors in quantizing magnetic field. The photovoltaic detection signal is
investigated at 4.2 K as a function of the gate voltage and magnetic field.
Oscillations analogous to the Shubnikov-de Haas oscillations, as well as their
strong enhancement at the cyclotron resonance, are observed. The results are
quantitatively described by a recent theory, showing that the detection is due
to rectification of the terahertz radiation by plasma waves related
nonlinearities in the gated part of the channel.Comment: 4 pages, 3 figure
Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
We report on the observation of a radiation helicity sensitive photocurrent
excited by terahertz (THz) radiation in dual-grating-gate (DGG)
InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a
circular polarization the current measured between source and drain contacts
changes its sign with the inversion of the radiation helicity. For elliptically
polarized radiation the total current is described by superposition of the
Stokes parameters with different weights. Moreover, by variation of gate
voltages applied to individual gratings the photocurrent can be defined either
by the Stokes parameter defining the radiation helicity or those for linear
polarization. We show that artificial non-centrosymmetric microperiodic
structures with a two-dimensional electron system excited by THz radiation
exhibit a dc photocurrent caused by the combined action of a spatially periodic
in-plane potential and spatially modulated light. The results provide a proof
of principle for the application of DGG HEMT for all-electric detection of the
radiation's polarization state.Comment: 7 pages, 4 figure
High performance bilayer-graphene Terahertz detectors
We report bilayer-graphene field effect transistors operating as THz
broadband photodetectors based on plasma-waves excitation. By employing
wide-gate geometries or buried gate configurations, we achieve a responsivity
and a noise equivalent power in the 0.29-0.38 THz range, in photovoltage and photocurrent mode.
The potential of this technology for scalability to higher frequencies and the
development of flexible devices makes our approach competitive for a future
generation of THz detection systems.Comment: 8 pages, 5 figures. Submitted to Applied Physics Letter
A Computational Efficient Nyquist Shaping Approach for Short-Reach Optical Communications
[EN] Recently, Half-Cycle Nyquist Subcarrier Modulation (HC-SCM) was proposed to achieve high spectral efficiency in intensity-modulator direct-detection optical links. This paper shows that the HC-SCM scheme has a high computational load and proposes the rational Oversampled Subcarrier Modulation (OVS-SCM) as a computational efficient alternative that, furthermore, improves the spectral efficiency. The presented experimental results show that our 256-QAM proposal allows to transmit below the hard-decision forward error correction, with a throughput of 17.8 Gb/s in a 2.5 GHz bandwidth, and a spectral efficiency of 7.2 b/s/Hz, through 20 km of single-mode optical fiber.This work was supported by the Spanish Ministerio de Economia y Competitividad and FEDER under the Grant TEC2015-70858-C2-2-R and Grant RTI2018-101658-B-I00.Pérez Pascual, MA.; Bruno, JS.; Almenar Terre, V.; Valls Coquillat, J. (2020). A Computational Efficient Nyquist Shaping Approach for Short-Reach Optical Communications. Journal of Lightwave Technology (Online). 38(7):1651-1658. https://doi.org/10.1109/JLT.2019.2961506S1651165838
Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
Plasmonic terahertz detection by a double-grating gate field-effect
transistor structure with an asymmetric unit cell is studied theoretically.
Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic
response mode is predicted for strong asymmetry of the structure unit cell.
This value of the responsivity is an order of magnitude greater than reported
previously for the other types of uncooled plasmonic terahertz detectors. Such
enormous responsivity can be obtained without using any supplementary antenna
elements because the double-grating gate acts as an aerial matched antenna that
effectively couples the incoming terahertz radiation to plasma oscillations in
the structure channel.Comment: Submitted to APL, 8 pages, 2 figure
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
We report on reflective electro-optic sampling measurements of TeraHertz
emission from nanometer-gate-length InGaAs-based high electron mobility
transistors. The room temperature coherent gate-voltage tunable emission is
demonstrated. We establish that the physical mechanism of the coherent
TeraHertz emission is related to the plasma waves driven by simultaneous
current and optical excitation. A significant shift of the plasma frequency and
the narrowing of the emission with increasing channel's current are observed
and explained as due to the increase of the carriers density and drift
velocity.Comment: 3 figure
- …