1,222 research outputs found
Stretched exponential behavior in remanent lattice striction of a (La,Pr)SrMnO bilayer manganite single crystal
We have investigated the time dependence of remanent magnetostriction in a
(La,Pr)SrMnO single crystal, in order to examine
the slow dynamics of lattice distortion in bilayered manganites. A competition
between double exchange and Jahn-Teller type orbital-lattice interactions
results in the observed lattice profile following a stretched exponential
function. This finding suggests that spatial growth of the local lattice
distortions coupled with e-electron orbital strongly correlates with the
appearance of the field-induced CMR effect.Comment: 3 figure
Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy
technique. Magnetization measurements show that this highly Mn-doped GaN film
exhibits ferromagnetism above room temperature. It is also revealed that the
high-temperature ferromagnetic state is significantly suppressed below 10 K,
accompanied by an increase of the electrical resistivity with decreasing
temperature. This observation clearly demonstrates a close relation between the
ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped
GaN film.Comment: 9 pages, 3 figure
Resistive relaxation in field-induced insulator-metal transition of a (LaPr)SrMnO bilayer manganite single crystal
We have investigated the resistive relaxation of a
(LaPr)SrMnO single crystal, in
order to examine the slow dynamics of the field-induced insulator to metal
transition of bilayered manganites. The temporal profiles observed in remanent
resistance follow a stretched exponential function accompanied by a slow
relaxation similar to that obtained in magnetization and magnetostriction data.
We demonstrate that the remanent relaxation in magnetotransport has a close
relationship with magnetic relaxation that can be understood in the framework
of an effective medium approximation by assuming that the first order parameter
is proportional to the second order one.Comment: 6 pages,5 figure
Insulating phase of a two-dimensional electron gas in Mg_xZn_(1−x)O/ZnO heterostructures below ν = 1/3
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state ν = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructures to be a prototype system for highly correlated quantum Hall physics
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