Cauchois and S\'en\'emaud Tables of wavelengths of X-ray emission lines and absorption edges

We present the Cauchois and S\'en\'emaud Tables of X-ray emission lines and absorption edges. They are written both in French and English. They were published in 1978 by Pergamon Press and are insufficiently known. However they are of large interest because of their completeness. They comprise the energies of all the K, L, M, N and O emission lines of natural elements from lithium up to uranium as well as the energies of satellite emissions and absorption discontinuities. The more intense lines of radio-elements up to fermium (Z = 100) are also given. The Tables range from the hard X-rays (122 keV, 0.01 nm) to the extreme ultra-violet (12 eV, 102 nm). For each transition, the wavelength ({\AA} and uX) and energy (eV and Ry) are given and references are indicated. The transitions are grouped by increasing wavelength (decreasing photon energy) and also by element and spectral series. We present, as an example, the use of the Tables to identify the emissions of the molybdenum L spectrum. We decided to scan the Cauchois and S\'en\'emaud Tables and make them available for the scientific community. They are now available at the Website of our laboratory, http://www.lcpmr.upmc.fr/.Comment: The Cauchois and S\'en\'emaud Tables are now available at the following address : http://www.lcpmr.upmc.fr/themes-A2f.php The definitive version of the paper is available at www3.interscience.wiley.com X-Ray Spectrom. 2011, 40, 12-1

Construction des énoncés et connecteurs dans la structuration des récits enfantins en arabe tunisien et en français

Ce travail associe l’analyse de productions narratives d’enfants de cinq à dix ans, en français par des monolingues (Sénémaud, 1997, 1998, thèse en cours ; Choi & Sénémaud 2000), en arabe tunisien et en français par des enfants tunisiens vivant en Tunisie (Anane, 2001, thèse en cours) et par des enfants issus de l’immigration en France (Allal, 2000, thèse en cours), pour y examiner l’utilisation des connecteurs en tant qu’indice de l’acquisition dans ces différentes situations (langue premièr..

Structural, electronic, and dynamical properties of amorphous gallium arsenide: a comparison between two topological models

We present a detailed study of the effect of local chemical ordering on the structural, electronic, and dynamical properties of amorphous gallium arsenide. Using the recently-proposed ``activation-relaxation technique'' and empirical potentials, we have constructed two 216-atom tetrahedral continuous random networks with different topological properties, which were further relaxed using tight-binding molecular dynamics. The first network corresponds to the traditional, amorphous, Polk-type, network, randomly decorated with Ga and As atoms. The second is an amorphous structure with a minimum of wrong (homopolar) bonds, and therefore a minimum of odd-membered atomic rings, and thus corresponds to the Connell-Temkin model. By comparing the structural, electronic, and dynamical properties of these two models, we show that the Connell-Temkin network is energetically favored over Polk, but that most properties are little affected by the differences in topology. We conclude that most indirect experimental evidence for the presence (or absence) of wrong bonds is much weaker than previously believed and that only direct structural measurements, i.e., of such quantities as partial radial distribution functions, can provide quantitative information on these defects in a-GaAs.Comment: 10 pages, 7 ps figures with eps

Spectres X du silicium, de l'aluminium et du magnésium dans divers minéraux

Energy shifts of SiKα, AlKα and MgKα emission lines from seven natural silicates and two oxides have been measured comparatively to the pure element. The results are discussed ; an attempt is made to correlate the measurements to the surrounding of each element in the compound.Les déplacements énergétiques des émissions SiKα, AlKα et MgKα ont été mesurés par rapport à l'élément pur dans 7 silicates naturels et dans 2 oxydes. Les résultats observés sont discutés en liaison avec l'environnement de chaque élément dans les composés.Pitault Bernard, Belin-Ferré Esther, Sénémaud Christiane. Spectres X du silicium, de l'aluminium et du magnésium dans divers minéraux. In: Bulletin de Minéralogie, volume 104, 2-3, 1981. 12e assemblée générale de l'I.M.A. - Orléans – Juillet 1980. Première partie : croissance cristalline / Physique des minéraux / Microscopie électronique

Caractérisation électronique d'interfaces profondes Al-InP

Al-InP (110) and (100) interfaces, obtained by means of various methods have been characterized by I-V, C-V, SCS, EXES. The measurements confirm the existence, for the n-InP material, of a significant barrier height (> 0.35 eV ) which is sensitive to the method of preparation. They show the presence of discrete interface states for cleaved samples and of states lying in a continuum for chemically etched samples. Very clear modifications, compared to the bulk, of the p density of states of phosphorus are observed at the various interfaces. They imply that the perturbed interfacial region is several tens of Å thick.Des interfaces Al-InP (110) et (100) préparées par différentes méthodes ont été caractérisées par I-V, C-V, SCS, EXES. Ces mesures confirment l'existence sur InP n d'une hauteur de barrière significative (> 0,35 eV) et sensible à la méthode de préparation. Elles mettent en évidence la présence d'états d'interface discrets pour les échantillons clivés, ou répartis dans un continuum pour ceux ayant subi un nettoyage chimique. Des modifications très nettes de la densité des états p du phosphore sont observées aux différentes interfaces par rapport à InP en volume. Ceci implique la présence d'une zone interfaciale perturbée sur plusieurs dizaines d'angströms