AC plasma induced modifications in Sb2S3thin films

Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3 thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10 to 10 ( cm) due to the annealing effect

Optical and electrical characterization of AgInS2 thin films deposited by spray pyrolysis.

Silver indium sulfide (AgInS2) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (Ts) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS2 thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS2, Ag2S, In2O3, and In2S3 can be grown only by changing the Ag:In:S ratio in the starting solution and Ts. So that, by carefully selecting the deposition parameters, single phase AgInS2 thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and Ts = 400 ◦C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 −1 cm−1 in the dark

A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2.

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV–vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the postdeposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (Eg) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 108 to 106 V-cm after plasma treatments