Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance

Preliminary evaluation of Glass Resin materials for solar cell cover use

The glass resins were deposited by several techniques on 200 micron thick cells and on 50 microns thick wafers. The covered cells were exposed to ultraviolet light in vacuum to an intensity of 10 UV energy-equivalent solar constants at air mass zero for 728 hr. The exposure was followed by a single long thermal cycle from ambient temperature to -150 C. Visual inspection of the samples indicated that all samples had darkened to varying degrees. The loss in short-circuit current was found to range from 8 to 24%, depending on the resin formulation. In another test over 40 glass resin-coated silicon wafers withstood 15 thermal cycles from 100 to-196 C in one or more of the thicknesses tested. Several of the resin-coated wafers were tested at 65 C and 90% relative humidity for 170 hr. No change in physical appearance was detected

A proposed generalized constitutive equation for nonlinear para-isotropic materials

Finite element models of varying complexities were used to solve problems in solid mechanics. Particular emphasis was given to concrete which is nonisotropic at any level of deformation and is also nonlinear in terms of stress-strain relationships

Statistical Uncertainties in Temperature Diagnostics for Hot Coronal Plasma Using the ASCA SIS

Statistical uncertainties in determining the temperatures of hot (0.5 keV to 10 keV) coronal plasmas are investigated. The statistical precision of various spectral temperature diagnostics is established by analyzing synthetic ASCA Solid-state Imaging Spectrometer (SIS) CCD spectra. The diagnostics considered are the ratio of hydrogen-like to helium-like line complexes of $Z\ge14$ elements, line-free portions of the continuum, and the entire spectrum. While fits to the entire spectrum yield the highest statistical precision, it is argued that fits to the line-free continuum are less susceptible to atomic data uncertainties but lead to a modest increase in statistical uncertainty over full spectral fits. Temperatures deduced from line ratios can have similar accuracy but only over a narrow range of temperatures. Convenient estimates of statistical accuracies for the various temperature diagnostics are provided which may be used in planning ASCA SIS observations.Comment: postscript file of 8 pages+3 figures; 4 files tarred, compressed and uuencoded. To appear in the Astrophysical Journal Letters; contents copyright 1994 American Astronomical Societ

Neutrino Anomalies in an Extended Zee Model

We discuss an extended $SU(2)\times U(1)$ model which naturally leads to mass scales and mixing angles relevant for understanding both the solar and atmospheric neutrino anomalies. No right-handed neutrinos are introduced in the model.The model uses a softly broken $L_e-L_{\mu}-L_{\tau}$ symmetry. Neutrino masses arise only at the loop level. The one-loop neutrino masses which arise as in the Zee model solve the atmospheric neutrino anomaly while breaking of $L_e-L_{\mu}-L_{\tau}$ generates at two-loop order a mass splitting needed for the vacuum solution of the solar neutrino problem. A somewhat different model is possible which accommodates the large-angle MSW resolution of the solar neutrino problem.Comment: 11 pages including 2 figures; a reference added and text changed accordingl

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation