Resonant tunneling of Hydrogen in Pd

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Multiagent-Based Data Presentation Mechanism for Multifaceted Analysis in Network Management Tasks

Although network management tasks are highly automated using big data and artificial intelligence technologies, when an unforeseen cybersecurity problem or fault scenario occurs, administrators sometimes directly analyze system data to make a heuristic decision. However, a wide variety of information is required to address complex cybersecurity risks, whereas current systems are focused on narrowing the candidates of information. In this study, we propose a multiagent-based data presentation mechanism (MADPM) that consists of agents operating data-processing tools that store and analyze network data. Agents in MADPM interact with other agents to form data-processing sequences. In this process, we design not only the composition of the sequence according to requirements, but also a mechanism to expand it to enable multifaceted analysis that supports heuristic reasoning. We tested five case studies in the prototype system implemented in an experimental network. The results indicated that the multifaceted presentation of data can support administrators more than the selected single-faceted optimal presentation. The final outcome of our proposed approach is the provision of a multifaceted and cross-system data presentation for heuristic inference in network management tasks

A hysteresis loop in electrical resistance of NbHx observed above the β−λ transition temperature

We investigate the electron transport properties and structures of β-NbHx(010) epitaxial thin films on Al2O3(001) substrates with a variety of hydrogen contents. NbHx epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance near room temperature. Notably, this hysteresis loop appears above the β–λ phase transition temperature. Detailed analysis of the temperature dependence of these structures suggests that the short-range ordering of hydrogen rearrangement in the λ-phase remains locally above the transition temperature, inducing the hysteresis in the resistance

Creation of a <i>p</i>-type TlBiSe2 using photo-induced doping

Owing to the location of the Dirac point, which is around the center of its wide bulk band gap, TlBiSe2 would be one of the most promising topological insulators for spintronics devices material. However, like many other topological insulators, defects, such as vacancy formed during the crystal growth, dope electrons into TlBiSe2 and make its bulk metallic. Here, we show the achievement of bulk insulating both n-type and p-type TlBiSe2 by photo-induced doping, a method carried out by a combination of photo-irradiation and H2O adsorption. We also show that the main trigger of this photo-induced doping is the excitation of the outermost d core level of the chalcogen atoms of the topmost layer as in the case of Bi2X3, where X = Se or Te.11Nsciescopu

Polarity reversal of the charge carrier in tetragonal TiH_{x}(x=1.6−2.0) at low temperatures

We present a combined experimental and theoretical study of the charge transport properties of TiH_{x}(x=1.6–2.0) epitaxial thin films. We found that the Hall coefficient of TiH_{x} strongly depends on hydrogen content and unit-cell volume: Nearly stoichiometric TiH_{x}(x≈2.0) films with large unit-cell volumes showed positive Hall coefficients at 4 K, whereas TiH_{x} samples with x<∼1.7 and small unit-cell volumes showed negative Hall coefficients at 4 K. Our density functional theory calculations reveal that the volume change leads to the change in the aspect ratio of the tetragonal lattice, thereby lifting the degeneracy of Ti t_{2g} states, and alters the contributions of electrons and holes at the Fermi surface and the sign of the Hall coefficient. The present study clarifies the important role of the lattice symmetry in determining the charge carrier polarity, and we suggest that electronic properties of metal hydrides can be tuned by the lattice parameters via the hydrogen contents