Studies of the radiation hardness of oxygen-enriched silicon detectors

Detectors of high-energy particles sustain substantial structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long 'lifetime' detectors are required. This work report s about radiation hardness of silicon P-I-N devices fabricated from oxygen-enriched, high-resistivity material. The high and nearly uniform concentration of oxygen in float-zone silicon has been achie ved by diffusion of oxygen from SiO2 layers

Resistivity peak values at transition between fractional quantum Hall states

Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretical predictions. It is found that the majority of the peak values are close to the theoretical values for two-dimensional systems with moderate mobilities.Comment: 3 pages, 1 figur

Non-Universal Behavior of Finite Quantum Hall Systems as a Result of Weak Macroscopic Inhomogeneities

We show that, at low temperatures, macroscopic inhomogeneities of the electron density in the interior of a finite sample cause a reduction in the measured conductivity peak heights $\sigma_{xx}^{\rm max}$ compared to the universal values previously predicted for infinite homogeneous samples. This effect is expected to occur for the conductivity peaks measured in standard experimental geometries such as the Hall bar and the Corbino disc. At the lowest temperatures, the decrease in $\sigma_{xx}^{\rm max}(T)$ is found to saturate at values proportional to the difference between the adjacent plateaus in $\sigma_{xy}$, with a prefactor which depends on the particular realization of disorder in the sample. We argue that this provides a possible explanation of the ``non-universal scaling'' of $\sigma_{xx}^{\rm max}$ observed in a number of experiments. We also predict an enhancement of the ``non-local'' resistance due to the macroscopic inhomogeneities. We argue that, in the Hall bar with a sharp edge, the enhanced ``non-local'' resistance and the size corrections to the ``local'' resistance $R_{xx}$ are directly related. Using this relation, we suggest a method by which the finite-size corrections may be eliminated from $R_{xx}$ and $R_{xy}$ in this case.Comment: REVTEX 3.0 file (38 pages) + 5 postscript figures in uuencoded format. Revised version includes an additional figure showing unpublished experimental dat

The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagrams of the integer quantum Hall effect.Comment: 7 pages, 8 figure

Statistical properties of the low-temperature conductance peak-heights for Corbino discs in the quantum Hall regime

A recent theory has provided a possible explanation for the ``non-universal scaling'' of the low-temperature conductance (and conductivity) peak-heights of two-dimensional electron systems in the integer and fractional quantum Hall regimes. This explanation is based on the hypothesis that samples which show this behavior contain density inhomogeneities. Theory then relates the non-universal conductance peak-heights to the ``number of alternating percolation clusters'' of a continuum percolation model defined on the spatially-varying local carrier density. We discuss the statistical properties of the number of alternating percolation clusters for Corbino disc samples characterized by random density fluctuations which have a correlation length small compared to the sample size. This allows a determination of the statistical properties of the low-temperature conductance peak-heights of such samples. We focus on a range of filling fraction at the center of the plateau transition for which the percolation model may be considered to be critical. We appeal to conformal invariance of critical percolation and argue that the properties of interest are directly related to the corresponding quantities calculated numerically for bond-percolation on a cylinder. Our results allow a lower bound to be placed on the non-universal conductance peak-heights, and we compare these results with recent experimental measurements.Comment: 7 pages, 4 postscript figures included. Revtex with epsf.tex and multicol.sty. The revised version contains some additional discussion of the theory and slightly improved numerical result

Comparison of radiation damage in silicon induced by proton and neutron irradiation

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. (16 refs)

Universal relation between longitudinal and transverse conductivities in quantum Hall effect

We show that any critical transition region between two adjacent Hall plateaus in either integer or fractional quantum Hall effect is characterized by a universal semi-circle relationship between the longitudinal and transverse conductivities, provided the sample is homogeneous and isotropic on a large scale. This conclusion is demonstrated both for the phase-coherent quantum transport as well as for the incoherent transport.Comment: REVTEX 3.0, 1 figure, 4 pages. SISSA-08179

A different view of the quantum Hall plateau-to-plateau transitions

We demonstrate experimentally that the transitions between adjacent integer quantum Hall (QH) states are equivalent to a QH-to-insulator transition occurring in the top Landau level, in the presence of an inert background of the other completely filled Landau levels, each contributing a single unit of quantum conductance, $e^{2}/h$, to the total Hall conductance of the system.Comment: 10 pages, 4 figures, Revtex 3.

Tunneling Conductance and Coulomb Blockade Peak Splitting of Two Quantum Dots Connected by a Quantum Point Contact

By using bosonization method and unitary transformation, we give a general relation between the dimensionless tunneling conductance and the fractional Coulomb blockade conductance peak splitting which is valid both for weak and strong transmission between two quantum dots, and show that the tunneling conductance has a linear temperature dependence in the low energy and low temperature limit.Comment: 12 pages, Revtex, no figures, to appear in Phys. Rev.

Universality in the Crossover between Edge Channel and Bulk Transport in the Quantum Hall Regime

We present a new theoretical approach for the integer quantum Hall effect, which is able to describe the inter-plateau transitions as well as the transition to the Hall insulator. We find two regimes (metallic and insulator like) of the top Landau level, in which the dissipative bulk current appears in different directions. The regimes are separated by a temperature invariant point.Comment: 4 page, 2 eps figures included, submitte