152 research outputs found
Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters
We demonstrate that low concentrations of a secondary magnetic phase in
(Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without
significantly degrading the Curie temperature or saturation magnetisation.
Magnetic measurements indicate that the secondary phase consists of MnAs
nanoclusters, of average size ~7nm. This approach to controlling the coercivity
while maintaining high Curie temperature, may be important for realizing
ferromagnetic semiconductor based devices.Comment: 8 pages,4 figures. accepted for publication in Appl. Phys. Let
Anisotropic Magnetoresistance components in (Ga,Mn)As
Our experimental and theoretical study of the non-crystalline and crystalline
components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at
exploring the basic physical aspects of this relativistic transport effect. The
non-crystalline AMR reflects anisotropic lifetimes of the holes due to
polarized Mn impurities while the crystalline AMR is associated with valence
band warping. We find that the sign of the non-crystalline AMR is determined by
the form of spin-orbit coupling in the host band and by the relative strengths
of the non-magnetic and magnetic contributions to the impurity potential. We
develop experimental methods directly yielding the non-crystalline and
crystalline AMR components which are then independently analyzed. We report the
observation of an AMR dominated by a large uniaxial crystalline component and
show that AMR can be modified by local strain relaxation. We discuss generic
implications of our experimental and theoretical findings including predictions
for non-crystalline AMR sign reversals in dilute moment systems.Comment: 4 pages, 3 figures. Phys. Rev. Lett. in pres
Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As
are sensitive to lattice strains as small as 10^-4 and that strain can be
controlled by lattice parameter engineering during growth, through post growth
lithography, and electrically by bonding the (Ga,Mn)As sample to a
piezoelectric transducer. In this work we show that analogous effects are
observed in crystalline components of the anisotropic magnetoresistance (AMR).
Lithographically or electrically induced strain variations can produce
crystalline AMR components which are larger than the crystalline AMR and a
significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. In
these experiments we also observe new higher order terms in the
phenomenological AMR expressions and find that strain variation effects can
play important role in the micromagnetic and magnetotransport characteristics
of (Ga,Mn)As lateral nanoconstrictions.Comment: 11 pages, 4 figures, references fixe
An Error-Control Code with an Imbalance of Ones and Zeros to Provide a Residual Carrier Component
We consider in this paper a direct sequence spread-spectrum communication system employing an error-control code having an imbalance of ones and zeroes. The primary motivation for using such a code is to provide a carrier component for synchronization as an alternative to the transmisson of a separate pilot tone. We evaluate the performance of this system when a concatenated code whose inner code is a constant-weight subcode of the (24, 12) extended Golay code and whose outer code is a Reed-Solomon code. We consider the effects of both white Gaussian noise and burst jamming, and we evaluate several decoding algorithms with different complexities and different coding gains. Near-maximum-likelihood decoding can be realized at the lowest data rates of interest, while successively less complicated algorithms achieving corresponding smaller coding gains must be used as the data rate increases. The performance of this system compares favorably with that of a more conventional pilot-tone system
Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
We demonstrate dynamic voltage control of the magnetic anisotropy of a
(Ga,Mn)As device bonded to a piezoelectric transducer. The application of a
uniaxial strain leads to a large reorientation of the magnetic easy axis which
is detected by measuring longitudinal and transverse anisotropic
magnetoresistance coefficients. Calculations based on the mean-field
kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the
measured effect. Electrically induced magnetization switching and detection of
unconventional crystalline components of the anisotropic magnetoresistance are
presented, illustrating the generic utility of the piezo voltage control to
provide new device functionalities and in the research of micromagnetic and
magnetotransport phenomena in diluted magnetic semiconductors.Comment: Submitted to Physical Review Letters. Updates version 1 to include a
more detailed discussion of the effect of strain on the anisotropic
magnetoresistanc
- …