Parton Distributions Functions of Pion, Kaon and Eta pseudoscalar mesons in the NJL model

Parton distributions of pseudoscalar pi,K and eta mesons obtained within the NJL model using the Pauli-Villars regularization method are analyzed in terms of LO and NLO evolution, and the valence sea quark and gluon parton distributions for the pion are obtained at Q^2 = 4 GeV^2 and compared to existing parametrizations at that scale. Surprisingly, the NLO order effects turn out to be small compared to the LO ones. The valence distributions are in good agreement with experimental analyses, but the gluon and sea distributions come out to be softer in the high-x region and harder in the low-x region than the experimental analyses suggest.Comment: (Latex, epsfig) 17 pages, 7 figure

Stationary configurations of two extreme black holes obtainable from the Kinnersley-Chitre solution

Stationary axisymmetric systems of two extreme Kerr sources separated by a massless strut, which arise as subfamilies of the well-known Kinnersley-Chitre solution, are studied. We present explicit analytical formulas for the individual masses and angular momenta of the constituents and establish the range of the parameters for which such systems can be regarded as describing black holes. The mass-angular momentum relations and the interaction force in the black-hole configurations are also analyzed. Furthermore, we construct a charging generalization of the Kinnersley-Chitre metric and, as applications of the general formulas obtained, discuss two special cases describing a pair of identical co- and counterrotating extreme Kerr-Newman black holes kept apart by a conical singularity. From our analysis it follows in particular that the equality $m^2-a^2-e^2=0$ relating the mass, angular momentum per unit mass and electric charge of a single Kerr-Newman extreme black hole is no longer verified by the analogous extreme black-hole constituents in binary configurations.Comment: final version revised according to referee's suggestion

Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation

Ternary films about 200 nm thick of composition Ru20Si15O65 have been synthesized by reactive rf magnetron sputtering of a Ru1Si1 target in an argon-oxygen gas. As-deposited, the films are X-ray-amorphous. Their atomic density is 8.9 × 10^22/cm^3 (5.1 g/cm^3), and their electrical resistivity is in the range of 2 mOmega cm. After annealing in dry oxygen at 600°C for 30 min, micron-sized grains of RuO2 grow out of the film and volatile RuO4 escapes. The significance of these results is discussed