Evolution of Resistive Switching Characteristics in WO3-x-based MIM Devices by Tailoring Oxygen Deficiency

We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been studied by measuring their DC current voltage properties. Switchability of the resistance states in the memristors have been found to depend strongly on the VOs concentration in the WO3-x layer. Depending on x, the memristors exhibited forming-free bipolar, forming-required bipolar and non-formable characteristics. Devices with high VOs concentration (~1*1021 cm-3) exhibited lower initial resistance and memory window of only 15, which has been increased to ~6500 with reducing VOs concentration to ~5.8*1020 cm-3. Forming-free, stable RS with memory window of ~2000 have been realized for a memristor possessing VOs concentration of ~6.2*1020 cm-3. Investigation of the conduction mechanism suggests that tailoring VOs concentration modifies the formation and dimension of the conducting filaments as well as the Schottky barrier height at WO3-x/Pt interface which deterministically modulates RS characteristics of the WO3-x based memristors

Engineering room-temperature multiferroicity in Bi and Fe codoped BaTiO3

Fe doping into BaTiO3, stabilizes the paraelectric hexagonal phase in place of the ferroelectric tetragonal one [P. Pal et al. Phys. Rev. B, 101, 064409 (2020)]. We show that simultaneous doping of Bi along with Fe into BaTiO3 effectively enhances the magnetoelectric (ME) multiferroic response (both ferromagnetism and ferroelectricity) at room-temperature, through careful tuning of Fe valency along with the controlled-recovery of ferroelectric-tetragonal phase. We also report systematic increase in large dielectric constant values as well as reduction in loss tangent values with relatively moderate temperature variation of dielectric constant around room-temperature with increasing Bi doping content in Ba1-xBixTi0.9Fe0.1O3 (0<x<0.1), which makes the higher Bi-Fe codoped sample (x=0.08) promising for the use as room-temperature high-k dielectric material. Interestingly, x=0.08 (Bi-Fe codoped) sample is not only found to be ferroelectrically (~20 times) and ferromagnetically (~6 times) stronger than x=0 (only Fe-doped) at room temperature, but also observed to be better insulating (larger bandgap) with indirect signatures of larger ME coupling as indicated from anomalous reduction of magnetic coercive field with decreasing temperature. Thus, room-temperature ME multiferroicity has been engineered in Bi and Fe codoped BTO (BaTiO3) compounds.Comment: 16 pages, 17 figure

Utilizing Andrographis paniculata leaves and roots by effective usage of the bioactive andrographolide and its nanodelivery: investigation of antikindling and antioxidant activities through in silico and in vivo studies

To valorise the bioactive constituents abundant in leaves and other parts of medicinal plants with the objective to minimize the plant-based wastes, this study was undertaken. The main bioactive constituent of Andrographis paniculata, an Asian medicinal plant, is andrographolide (AG, a diterpenoid), which has shown promising results in the treatment of neurodegenerative illnesses. Continuous electrical activity in the brain is a hallmark of the abnormal neurological conditions such as epilepsy (EY). This can lead to neurological sequelae. In this study, we used GSE28674 as a microarray expression profiling dataset to identify DEGs associated with andrographolide and those with fold changes &gt;1 and p-value &lt;0.05 GEO2R. We obtained eight DEG datasets (two up and six down). There was marked enrichment under various Kyoto Encyclopaedia of Genes and Genomes (KEGG) and Gene Ontology (GO) terms for these DEGs (DUSP10, FN1, AR, PRKCE, CA12, RBP4, GABRG2, and GABRA2). Synaptic vesicles and plasma membranes were the predominant sites of DEG expression. AG acts as an antiepileptic agent by upregulating GABA levels. The low bioavailability of AG is a significant limitation of its application. To control these limitations, andrographolide nanoparticles (AGNPs) were prepared and their neuroprotective effect against pentylenetetrazol (PTZ)-induced kindling epilepsy was investigated using network pharmacology (NP) and docking studies to evaluate the antiepileptic multi-target mechanisms of AG. Andrographolide is associated with eight targets in the treatment of epilepsy. Nicotine addiction, GABAergic synapse, and morphine addiction were mainly related to epilepsy, according to KEGG pathway enrichment analysis (p &lt; 0.05). A docking study showed that andrographolide interacted with the key targets. AG regulates epilepsy and exerts its therapeutic effects by stimulating GABA production. Rats received 80 mg/kg body weight of AG and AGNP, phenytoin and PTZ (30 mg/kg i.p. injection on alternate days), brain MDA, SOD, GSH, GABAand histological changes of hippocampus and cortex were observed. PTZ injected rats showed significantly (***p &lt; 0.001) increased kindling behavior, increased MDA, decreased GSH, SOD, GABA activities, compared with normal rats, while treatment AGNPs significantly reduced kindling score and reversed oxidative damage. Finally, we conclude that the leaves and roots of A. Paniculata can be effectively utilized for its major bioactive constituent, andrographolide as a potent anti-epileptic agent. Furthermore, the findings of novel nanotherapeutic approach claim that nano-andrographolide can be successfully in the management of kindling seizures and neurodegenerative disorders

Modulation of resistive switching properties of non-stoichiometric WO3-x based asymmetric MIM structure by interface barrier modification

The impact of device operation condition and ambient moisture on the interface-type resistive switching (RS) characteristics of a non-stoichiometric polycrystalline tungsten oxide (WO3-x) based metal-insulator-metal device with an Au top electrode and a Pt bottom electrode has been investigated. The device exhibits rectification and stable bipolar RS characteristics without the need for any forming step, where the switching is primarily dominated by the Schottky type Au/WO3-x interface. DC conduction characteristics of the device have been investigated at different temperature, bias stress, and relative humidity conditions. Current conduction through the active layer has been found to be dominated by Schottky emission at low electric field and Poole-Frenkel emission at high electric field. An increase in current and a strong reduction in the rectification characteristic have been observed on subjecting the device to DC bias stress of appropriate polarity as well as increasing ambient moisture. Modification of the Schottky barrier due to defect redistribution when DC bias stress is applied and due to the dipoles induced at the Au/WO3-x interface by water molecules with increasing ambient moisture content have been discussed as a possible mechanism of the observed RS modulation

Origin and tuning of room-temperature multiferroicity in Fe-doped BaTiO3BaTiO_{3}

Simultaneous coexistence of room-temperature ferromagnetism and ferroelectricity in Fe-doped BaTiO$_3$ (BTO) is intriguing, as such Fe doping into tetragonal BTO, a room-temperature ferroelectric, results in the stabilization of its hexagonal polymorph which is ferroelectric only below ∼80K. Here, we investigate its origin and show that Fe-doped BTO has a mixed-phase room-temperature multiferroicity, where the ferromagnetism comes from the majority hexagonal phase and a minority tetragonal phase gives rise to the observed weak ferroelectricity. In order to achieve majority tetragonal phase (responsible for room-temperature ferroelectricity) in Fe-doped BTO, we investigate the role of different parameters which primarily control the paraelectric hexagonal phase stability over the ferroelectric tetragonal one and identify three major factors, namely the effect of ionic size, Jahn-Teller (JT) distortions, and oxygen-vacancies, to be primarily responsible. The effect of ionic size which can be qualitatively represented using the Goldschmidt's tolerance factor seems to be the major dictating factor for the hexagonal phase stability. The understanding of these factors not only enables us to control them but also to achieve a suitable codoped BTO compound with enhanced room-temperature multiferroic properties