Configuration interaction in delta-doped heterostructures

We analyze the tunnel coupling between an impurity state located in a $\delta$-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the $\delta$ -- layer. The problem is formulated in terms of Anderson-Fano model as configuration interaction between the carrier bound state at the impurity and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs structures with a $\delta$-Mn layer.Comment: arXiv admin note: substantial text overlap with arXiv:1111.089

Manifestation of spin-orbit interaction in tunneling between 2D electron layers

An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltage range. The dependence of the conductance on voltage turns out to be very sensitive to the relation between Rashba and Dresselhaus contributions even in the absence of magnetic field. The elastic scattering broadens the resonances in the first case and restores the conductance to a larger magnitude in the latter one. These effects open possibility to determine the parameters of spin-orbit interaction and electrons scattering time in tunneling experiments with no necessity of external magnetic field