Compact Modeling of Quantization Effects for Cylindrical Gate-All-Around MOSFETs

International audienc

Polysilicon high frequency devices for large area electronics: characterization, simulation and modeling

International audienc

Polysilicon high frequency devices for large area electronics: characterization, simulation and modeling

International audienc

Delay partitioning helps reducing variability in 3DVLSI

International audience3DVLSI is an emerging more than Moore technology. In this paper, we propose 3D design methodologies dealing with process variability. Using SPICE models and Monte Carlo simulations we show a delay partioning method for stacked circuits to reduce frequency dispersion by 30%. We also compare how the process correlation between tiers influences the design corners

A Physics-Based Compact Model of Quantum-Mechanical Effects for Thin Cylindrical Si-Nanowire MOSFETs

International audienc

A Compact Model of Short Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs

International audienc

Explicit compact model of independent double-gate MOSFET

International audienc

An Explicit Compact Model of Quantum-Mechanical Effects for Cylindrical Surrounding-Gate MOSFETs

National audienc

Explicit analytical charge-based model of asymmetrical double-gate MOSFET

International audienc

Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements

In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.Anglai