190 research outputs found
Investigations of mode control in proton-implanted and oxide-confined VCSELs using PBGs: modelling and experiment
Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers
Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics
Adding dilute concentrations of nitrogen (N) or bismuth (Bi) into conventional III-V semiconductor alloys causes a large bowing of the bandgap energy due to the modification of the electronic band structure. This behaviour has attracted significant interest due to the resulting optical and electronic properties. Firstly, the authors present theoretical band structure models for GaAs-based dilute nitride, dilute bismide and dilute bismide-nitride alloys and then use them within current continuity equations to show the photovoltaic behaviour. To describe the band structures of these highly mismatched III-V semiconductor alloys, the authors introduce a 10-, 12and 14-band k · p Hamiltonian for dilute nitride, dilute bismide and dilute bismide-nitride semiconductors, respectively. The authors then use this approach to analyse GaBiAs multi-quantum well p-i-n structures for photovoltaic performance. Through theoretical analysis the authors can: (i) elucidate important trends in the properties and photovoltaic performance of GaBiAs QW structures and (ii) comment generally on the suitability of GaBiAs alloys and heterostructures for applications in multi-junction solar cells. In particular, the authors identify and quantify the limitations associated with current GaBiAs solar cells, and describe the improvements in performance that can be expected pending further development of this emerging class of devices
Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers
We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band k·p Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 μm lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 μm. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 - 5 μm wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAs- and InP-based near- and mid-infrared laser technologies
Excitons in type-II quantum dots: Finite offsets
Quantum size effects for an exciton attached to a spherical quantum dot are
calculated by a variational approach. The band line-ups are assumed to be
type-II with finite offsets. The dependence of the exciton binding energy upon
the dot radius and the offsets is studied for different sets of electron and
hole effective masses
Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 m on InP substrates
We present a theoretical analysis and optimisation of the properties and
performance of mid-infrared semiconductor lasers based on the dilute bismide
alloy InGaAsBi, grown on conventional (001) InP
substrates. The ability to independently vary the epitaxial strain and emission
wavelength in this quaternary alloy provides significant scope for band
structure engineering. Our calculations demonstrate that structures based on
compressively strained InGaAsBi quantum wells (QWs)
can readily achieve emission wavelengths in the 3 -- 5 m range, and that
these QWs have large type-I band offsets. As such, these structures have the
potential to overcome a number of limitations commonly associated with this
application-rich but technologically challenging wavelength range. By
considering structures having (i) fixed QW thickness and variable strain, and
(ii) fixed strain and variable QW thickness, we quantify key trends in the
properties and performance as functions of the alloy composition, structural
properties, and emission wavelength, and on this basis identify routes towards
the realisation of optimised devices for practical applications. Our analysis
suggests that simple laser structures -- incorporating
InGaAsBi QWs and unstrained ternary
InGaAs barriers -- which are compatible with established
epitaxial growth, provide a route to realising InP-based mid-infrared diode
lasers.Comment: Submitted versio
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