68 research outputs found

    An integrated view of theiInfluence of temperature, pressure, and humidity on the stability of trimorphic cysteamine hydrochloride

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    Understanding the phase behavior of pharmaceuticals is important for dosage form development and regulatory requirements, in particular after the incident with ritonavir. In the present paper, a comprehensive study of the solid-state phase behavior of cysteamine hydrochloride used in the treatment of nephropathic cystinosis and recently granted orphan designation by the European Commission is presented employing (high-pressure) calorimetry, water vapor sorption, and X-ray diffraction as a function of temperature. A new crystal form (I2/a, form III) has been discovered, and its structure has been solved by X-ray powder diffraction, while two other crystalline forms are already known. The relative thermodynamic stabilities of the commercial form I and of the newly discovered form III have been established; they possess an overall enantiotropic phase relationship, with form I stable at room temperature and form III stable above 37 degrees C. Its melting temperature was found at 67.3 +/- 0.5 degrees C. Cysteamine hydrochloride is hygroscopic and immediately forms a concentrated saturated solution in water with a surprisingly high concentration of 47.5 mol % above a relative humidity of 35%. No hydrate has been observed. A temperature composition phase diagram is presented that has been obtained with the unary pressure temperature phase diagram, measurements, and calculations. For development, form I would be the best form to use in any solid dosage form, which should be thoroughly protected against humidity.Postprint (author's final draft

    Coprecipitation of thorium with UO 2

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    Experimental study on the mechanism of carbon diffusion in silicon

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    \u3cp\u3eCVD-grown lightly C-doped superlattices with peak C concentrations of 2.10\u3csup\u3e18\u3c/sup\u3e/cm\u3csup\u3e2\u3c/sup\u3e and 2.10\u3csup\u3e19\u3c/sup\u3e/cm\u3csup\u3e2\u3c/sup\u3e were annealed in NH\u3csub\u3e3\u3c/sub\u3e, N\u3csub\u3e2\u3c/sub\u3e/H\u3csub\u3e2\u3c/sub\u3e, N\u3csub\u3e2\u3c/sub\u3e, and O\u3csub\u3e2\u3c/sub\u3e ambient gases to investigate the influence of a range of point-defect conditions on C diffusion at the nanometer scale. C profiles were measured by Secondary-ion mass spectroscopy. The profiles exhibit exponential-like diffusion consistent with a 'long hop' diffusion process with a characteristic migration length λ (=19 ± 3 nm at 850 °C). Within experimental errors the value of λ is the same for all the ambient gases used, whereas the migration frequency g increases by two orders of magnitude as the ambient gas is changed from NH\u3csub\u3e3\u3c/sub\u3e ambient (interstitial undersaturation) to O\u3csub\u3e2\u3c/sub\u3e ambient (interstitial supersaturation), and decreases as a function of C concentration in the as-grown superlattice. The results confirm that C diffuses predominantly by a kick out mechanism under near-equilibrium diffusion conditions. Initial results support the chemical-pump model for suppression of diffusion in C-doped silicon.\u3c/p\u3

    Diffusion suppression in silicon by substitutional C doping

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    \u3cp\u3eThe role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.\u3c/p\u3
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