Resonant holographic interferometry measurements of laser ablation plumes in vacuum, gas, and plasma environments

Resonant holographic interferometry and dye‐laser‐resonance‐absorption photography have been utilized to investigate the expansion of the laser ablation plumes produced by a KrF excimer laser beam (248 nm) focused onto an aluminum target (≊0.1 cm2, 2–6 J/cm2). Plume expansion was studied in vacuum and in background argon gas pressures of 14 mTorr, 52 mTorr, 210 mTorr, 1 Torr, and 35 Torr. The existing theory for the interpretation of resonant interferograms has been extended to account for Doppler shift effects, the diagnostic laser bandwidth, and the selective absorption of the laser beam. Absolute line densities in the range 4.3×1013–1.0×1015 cm−2 have been measured in the ablation plumes, which imply measured Al neutral densities of up to 1×1015 cm−3. The total number of Al neutral atoms in a plume has been measured to be ≊3×1014, which corresponds to a surface etch rate of ≊1 nm/pulse. Expansion velocities in the range 1.1–1.4 cm/μs were measured for the pressures ≤210 mTorr, while ≊0.3 cm/μs was measured for 1 Torr and ≊0.08 cm/μs was measured for 35 Torr. Ablation plume expansion into a 1 Torr rf argon plasma environment was compared with the expansion into a 1 Torr argon gas. The ablation plume appeared to expand and dissipate slightly faster in the plasma.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70791/2/JAPIAU-76-9-5457-1.pd

Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si

Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of damage layers below the Si surface is slightly less than predicted by code calculations for a maximum, effective ion energy of about 8 keV. The ion depth of penetration is limited by the overlying Fe film as well as the slow rise and fall of the voltage. © 2001 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70183/2/APPLAB-78-24-3785-1.pd

Diagnostic characterization of ablation plasma ion implantation

Experiments are reported in which two configurations for ablation-plasma-ion-implantation (APII) are characterized by diagnostics and compared. The first configuration oriented the target parallel to the deposition substrate. This orientation yielded ion-beam-assisted deposition of thin films. A delay (>5 μs)(>5 μs) between laser and high voltage was necessary for this geometry to avoid arcing between negatively biased substrate and target. The second experimental configuration oriented the target perpendicular to the deposition substrate, reducing arcing, even for zero/negative delay between the laser and the high voltage pulse. This orientation also reduced neutral atom, ballistic deposition on the substrate resulting in a pure ion implantation mode. Ion density measurements were made by resonant laser diagnostics and Langmuir probes, yielding total ion populations in the range of 1014.1014. Implanted ion doses were estimated by electrical diagnostics, and materials analysis, including x-ray energy dispersive spectroscopy and x-ray photoelectron spectroscopy, yielding implanted doses in the range 1012 ions/cm2 per pulse.1012 ions/cm2 per pulse. This yields an APII efficiency of order 10% for implantation of laser ablated ions. Scaling of ion dose with voltage agrees well with a theory assuming the Child–Langmuir law and that the ion current at the sheath edge is due to the uncovering of the ions by the movement of the sheath. Thin film analysis showed excellent adhesion with smoother films for an accelerating voltage of −3.2 kV;−3.2 kV; higher voltages (−7.7 kV)(−7.7 kV) roughened the film. © 2003 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70896/2/JAPIAU-93-11-8876-1.pd

Comparison of deferral rates using a computerized versus written blood donor questionnaire: a randomized, cross-over study [ISRCTN84429599]

BACKGROUND: Self-administered computer-assisted blood donor screening strategies may elicit more accurate responses and improve the screening process. METHODS: Randomized crossover trial comparing responses to questions on a computerized hand-held tool (HealthQuiz, or HQ), to responses on the standard written instrument (Donor Health Assessment Questionnaire, or DHAQ). Randomly selected donors at 133 blood donation clinics in the area of Hamilton, Canada participated from 1995 to 1996. Donors were randomized to complete either the HQ or the DHAQ first, followed by the other instrument. In addition to responses of 'yes' and 'no' on both questionnaires, the HQ provided a response option of 'not sure'. The primary outcome was the number of additional donors deferred by the HQ. RESULTS: A total of 1239 donors participated. Seventy-one potential donors were deferred as a result of responses to the questionnaires; 56.3% (40/71) were deferred by the DHAQ, and an additional 43.7% (31/71) were deferred due to risks identified by the HQ but not by the DHAQ. Fourteen donors self-deferred; 11 indicated on the HQ that they should not donate blood on that day but did not use the confidential self-exclusion option on the DHAQ, and three used the self-exclusion option on the DHAQ but did not indicate that they should not donate blood on the HQ. The HQ identified a blood contact or risk factor for HIV/AIDS or sexually transmitted infection that was not identified by the DHAQ in 0.1% to 2.7% of donors. CONCLUSION: A self-administered computerized questionnaire may increase risk reporting by blood donors