Spin Relaxation in Single-Layer Graphene with Tunable Mobility

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin–orbit and hyperfine couplings. In experiments, however, spin lifetimes in single-layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune the mobility between 2700 and 12 000 cm²/(V s), we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that, while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering

Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene

The quality of the tunnel barrier at the ferromagnet/graphene interface plays a pivotal role in graphene spin valves by circumventing the impedance mismatch problem, decreasing interfacial spin dephasing mechanisms and decreasing spin absorption back into the ferromagnet. It is thus crucial to integrate superior tunnel barriers to enhance spin transport and spin accumulation in graphene. Here, we employ a novel tunnel barrier, strontium oxide (SrO), onto graphene to realize high quality spin transport as evidenced by room-temperature spin relaxation times exceeding a nanosecond in graphene on silicon dioxide substrates. Furthermore, the smooth and pinhole-free SrO tunnel barrier grown by molecular beam epitaxy (MBE), which can withstand large charge injection current densities, allows us to experimentally realize large spin accumulation in graphene at room temperature. This work puts graphene on the path to achieve efficient manipulation of nanomagnet magnetization using spin currents in graphene for logic and memory applications

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe_<i>x</i>) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that, in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe₂) monolayer, while for thicker films it could originate from a combination of vdW MnSe₂ and/or interfacial magnetism of α-MnSe(111). Magnetization measurements of monolayer MnSe_<i>x</i> films on GaSe and SnSe₂ epilayers show ferromagnetic ordering with a large saturation magnetization of ∼4 Bohr magnetons per Mn, which is consistent with the density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe₂. Growing MnSe_<i>x</i> films on GaSe up to a high thickness (∼40 nm) produces α-MnSe(111) and an enhanced magnetic moment (∼2×) compared to the monolayer MnSe_<i>x</i> samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveals an abrupt and clean interface between GaSe(0001) and α-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe₂ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing

NaSn₂As₂: An Exfoliatable Layered van der Waals Zintl Phase

The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin–orbit coupling properties enables the realization of unique physical phenomena in these few-atom-thick building blocks and in proximity to other materials. Herein, using NaSn₂As₂ as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt₂Pn₂ (A = group 1 or 2 element, Tt = group 14 tetrel element, and Pn = group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman-active modes of the bulk crystals <i>via</i> polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn₂As₂ samples are resistant toward oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy, density functional theory, and transport on bulk and exfoliated samples, we show that NaSn₂As₂ is a highly conducting 2D semimetal, with resistivities on the order of 10^–6 Ω·m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics