Properties of lift-off structured high Tc microbridges

Microbridges and DC SQUIDs (superconducting quantum interference devices) were fabricated, using a lift-off technique, from RF sputtered YBaCuO films on MgO single-crystal substrates. Microwave measurements at 9 GHz on microbridges and the magnetic-field dependence of their critical current reveal wide bridge behaviour up to temperatures near the maximum operating temperature of the bridge. Mostly, a linear dependence of the critical current on the temperature is found, which is connected with high intrinsic 1/f noise if the bridge is constant-current-biased slightly above the critical current. In some bridges and DC SQUIDs, regimes with a temperature dependence proportional to (1-T/Tc)1.5 are found. In this case the 1/f noise level is much smaller and SQUID modulation can be followed to about 65

Fabrication of 45 degrees template grain boundary junctions using a CaO lift-off technique

45 degrees grain boundary junctions have been made using (100) MgO substrates, a CeO2 template layer and an YBa2Cu3O7 top layer. To minimize the damage to the MgO surface, which will occur if the CeO2 is structured using ion milling, the CeO2 layer has been structured using the CaO lift-off technique. Electrical measurements of these junctions as a function of temperature, microwave irradiation and magnetic field will be discussed in this paper

Introduction of ramp-type technology in HTS quasiparticle injection devices

Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed

Response of YBCO/PCBO/YBCO ramp type Josephson junctions to near MM wave irradiation

A high Tc Josephson device for high frequency detection applications is being developed, consisting of an YBCO/PBCO/YBCO ramp type junction and a broad band log-periodic antenna. In this contribution we present the response of such a device to (near) mm wave irradiation. Shapiro steps have been observed up to very high voltage values - nearly 4 mV at 10 K, at the maximum of the radiation power. The modulation of the step amplitudes shows very good resemblence with the predictions from the Resistively Shunted Junction model

Conductance studies on different types of Nb/Al, AlOx,(/A1)/Nb Josephson tunnel junctions

The conductance-voltage characteristics of different types of Josephson tunnel junctions have been measured at 4.2 K: symmetric Nb/Al, AlOx/Al/Nb, asymmetric Nb/Al, AlOx/Nb and Nb/Al/AlOx-/AlOx/Nb, containing a double oxidation layer. The symmetric junctions can be described very well by a trapezoidal potential barrier model. The asymmetric junctions show less agreement with theory. In these junctions resistance switching occurs, possibly due to charge trapping. The resistance is lower than in symmetric junctions. The conductance measurements on double oxidation layer junctions show, that this type of junction has an inhomogeneous oxide layer

Preparation and properties of all high Tc SNS-type edge DC SQUIDs

High-Tc SNS-type Josephson junctions and DC SQUIDs were successfully fabricated using hetero-epitaxially grown multilayers of YBa2Cu3Ox and PrBa2 Cu3O. These layers are c-axis oriented, and hence edges of the multilayers give rise to a current flow in the ab-plane between the electrodes of a Josephson junction. The necessary structuring was done by Ar ion beam etching. The individual junctions exhibit a supercurrent up to 80 K. The IcRn product of these junctions usually has a lower limit of 8 mV at 4.2 K. Voltage modulation of the first DC SQUIDs can be observed up to 66 K. The voltage modulation for various bias currents investigated at 4.2 K noise measurements were performed. Details on the fabrication and measurements are presente

Multichannel heart scanner based on high-Tc SQUIDs

A 7-channel magnetometer for magnetocardiography based on high-T c SQUIDs has been realized. This magnetometer is used for test experiments in the development of a multichannel high-Tc SQUID based heart-scanner for clinical applications. The intrinsic noise level of the channels in the 7-channel system is typically 120 fT/¿(Hz) down to 1 Hz. Magnetocardiograms were recorded inside a magnetically shielded room. Introductory experiments were performed on the suppression of noise by combining magnetometers to form planar gradiometers. The noise suppression that can be established appeared to be limited by the imbalance of the gradiometric configuration, which is roughly 2%. This relatively poor balance of the system is caused by inaccuracies in the transfer functions of the individual SQUID magnetometers, and by deviations from the planar geometr

Superconducting Mg-B films by pulsed laser deposition in an in-situ two-step process using multi-component targets

Superconducting thin films have been prepared in a two-step in-situ process, using the Mg-B plasma generated by pulsed laser ablation. The target was composed of a mixture of Mg and MgB2 powders to compensate for the volatility of Mg and therefore to ensure a high Mg content in the film. The films were deposited at temperatures ranging from room temperature to 300 degrees C followed by a low-pressure in-situ annealing procedure. Various substrates have been used and diverse ways to increase the Mg content into the film were applied. The films show a sharp transition in the resistance and have a zero resistance transition temperature of 22-24 K.Comment: 4 pages, 3 figures, submitted to Applied Physics Letter