Broadband passive InP membrane regenerator for silicon-based optical interconnect applications

\u3cp\u3eImproved passive signal regeneration performance based on bonded InP membrane waveguides is demonstrated. A tripling of the ER and receiver sensitivity enhancement of >3.6dB is achieved over the entire C-band at a bitrate of 2.5Gb/s. OFC/NFOEC Technical Digest\u3c/p\u3

Bias-free, low power and optically driven membrane InP switch on SOI for remotely configurable photonic packet switches

A small footprint integrated Membrane InP Switch (MIPS) on Silicon-On-Insulator (SOI) is demonstrated for use in all-optical packet switching. The device consists of an optically pumped III–V membrane waveguide of only 100nm thick, coupled to the underlying SOI waveguide circuit. Because of its limited thickness, the optical confinement in the active layers is maximized, allowing for high extinction ratio of over 30dB when applying a low power optical pump signal, over the entire C-band. The switch has 400/1300ps on/off switching times and no measurable pattern dependence or switching related power penalties for a bitrate up to 40Gb/s, using a switching power of only 2dBm

A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs

We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing

Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing

Recent advances in the photonic integration of mode-locked laser diodes

\u3cp\u3eMode-locked fiber and solid state lasers have played an essential role in several scientific and technological developments. The integration of mode-locked lasers on chips could enable their use in a wide range of applications. The advancement of semiconductor mode-locked laser diodes has been going on for several decades, but has recently seen the development of novel devices based on generic InP and III-V-on-silicon photonic integration platforms. These photonic integration platforms enable the use of standardized components and low-loss waveguides within the laser cavity, allowing for the design of advanced extended cavities. In this manuscript we give a review of these novel devices and compare their performance.\u3c/p\u3

Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured

A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

\u3cp\u3eWe propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um \u3csup\u3e2\u3c/sup\u3e (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing. \u3c/p\u3