9 research outputs found
Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment
Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies
We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events
Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results
Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak
A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak
Low-Energy Proton Testing Methodology
Use of low-energy protons and high-energy light ions is becoming necessary to investigate current-generation SEU thresholds. Systematic errors can dominate measurements made with low-energy protons. Range and energy straggling contribute to systematic error. Low-energy proton testing is not a step-and-repeat process. Low-energy protons and high-energy light ions can be used to measure SEU cross section of single sensitive features; important for simulation
Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells
Alpha-Particle Emission Energy Spectra From Materials Used for Solder Bumps
Abstract-The emitted alpha particle energy distribution from solder bumps can show substantial surface emission which has a large impact on the modeled SEU rate. State-of-the art alpha-particle detectors are required to measure the low emissivity and energy distribution