5 research outputs found

    Excitation Energy Dependent Ultrafast Luminescence Behavior of CdS Nanostructures

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    Selected semiconductor nanostructures provide extremely localized coherent light sources. Here an ensemble of CdS nanostructures was excited by UV/vis femtosecond laser pulses and their ultrafast luminescence characteristics were investigated as functions of the pulse energy fluence and the photon quantum energy. All optical Kerr gating enabled studies of the emission dynamics with a time resolution of 150 fs avoiding any influence on the CdS emission. The initially observed emission built up after a delay of 0.1ā€“3 ps and decayed rapidly in a biexponential way, strongly dependent on both the laser energy fluence and the quantum energy. The central wavelength of the emission spectrum revealed a significant blue-shift within the first few ps followed by a transient red-shift relative to spontaneous excitonic emission of CdS. All findings are mainly attributed to stimulated radiative carrier recombination in the laser excited electronā€“hole plasma after its thermalization with the CdS lattice

    Spectroscopic Characterization of Rocksalt-Type Aluminum Nitride

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    Starting from nanocrystalline and submicron wurtzite-aluminum nitride (w-AlN) powder rocksalt structure (rs-AlN) samples were synthesized by two different methods of shock wave recovery experiments. The resulting samples contained up to 86% rs-AlN, stable at room temperature, giving for the first time the possibility to comprehensively characterize the material by powder X-ray diffraction, Fourier transform infrared (IR), Raman, and <sup>27</sup>Al NMR spectroscopy. Raman and IR modes were calculated by density functional theory, allowing for the interpretation of the respective experimental spectra. By <sup>27</sup>Al NMR the chemical shift of rs-AlN was determined, and the quadrupolar coupling constant was estimated
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