Thermal stability of amorphous LaScO3 films on silicon

The thermal stability of amorphous LaScO3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained < 0.1 A of SiO2 at the interface between LaScO3 and silicon. XRD studies showed that the films remained amorphous after annealing in N-2 at 700 degrees C, although HRTEM showed structural order on an similar to 1 nm length scale even in the as-deposited films. By 800 degrees C, the LaScO3 had started to crystallize and formed a similar to 5 nm thick Sc-deficient interlayer between it and silicon. (c) 2006 American Institute of Physics

Chlorination of hydrogen-terminated silicon (111) surfaces

Infrared absorption spectroscopy was used to investigate the chlorination of hydrogen-terminated Si(111) surfaces by three different methods: (a) exposure to a saturated solution of phosphorus pentachloride (PCl5) in chlorobenzene; (b) exposure to chlorine gas, Cl2(g), and (c) exposure to Cl2(g) under UV illumination. X-ray photoelectron spectroscopy and first principles model (clusters) calculations were used to explore the structure and dynamics of these surfaces. The infrared spectra exhibited sharp chlorine-related vibrations at 586 and 527 cm^–1. The narrow full width at half maximum of these vibrations for all three preparation methods indicated that all functionalization schemes produced a nearly complete monolayer of Cl with little surface roughening or introduction of step edges. The 527 cm^–1 mode was at a much higher frequency than might be expected for the bending vibration of Si monochloride. Theoretical calculations show, however, that this vibration involves the displacement of the top Si atom parallel to the surface, subject to a relatively stiff potential, shifting its frequency to a value fairly close to that of the Si–Cl stretching mode on a Si(111) surface

Alkylation of Silicon(111) surfaces

Methylation of chlorine-terminated silicon (111) (Si-Cl) is investigated by Infra Red Absorption Spectroscopy (IRAS). Starting from an atomically flat H-terminated Si(111), the surface is first chlorinated by a gas phase process, then methylated using a Grignard reagent. Methyl groups completely replace Cl, and are oriented normal to the surface. The surface remains atomically flat with no evidence of etching

Is the chain dynamics in thin polymer films isotropic ?

The dynamics of molten polymer chains (polydimethylsiloxane) confined between air and a solid, wettable and non-adsorbing surface, is investigated using NMR. The basic approach used here consists in studying how nuclear interactions are time-averaged by rapid molecular motions. Chain segments in such molten films undergo uniaxial reorientations around the normal to the surfaces. The influence of the film thickness ( 50 ≤ h ≤ 3500 Å ) proves this dynamic uniaxiality involves rapid segment diffusion between both surfaces which impose a high degree of planar orientation. Thus the segmental ordering is observed over a thickness range which depends on the degree of chain entanglements