30 research outputs found
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The Effect of High-Resistance SnO2 on CdS/CdTe Device Performance
In this paper, we have studied the effect of high-resistance SnO2 buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO2 buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600{angstrom}, the device performance is dominated by CdS thickness, not the i-SnO2 layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO2 buffer layer is needed
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CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer
This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhance