Kondo-like behaviors in magnetic and thermal properties of single crystal Tm5Si2Ge2

We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgeman method and performed XRD, EDS, magnetization, ac and dc magnetic susceptibilities, specific heat, electrical resistivity and XPS experiments. It crystallizes in orthorhombic Sm5Ge4-type structure. The mean valence of Tm ions in Tm5Si2.0Ge2.0 is almost trivalent. The 4f states is split by the crystalline electric field. The ground state exhibits the long range antiferromagnetic order with the ferromagnetically coupled magnetic moments in the ac plane below 8.01 K, while the exited states exhibit the reduction of magnetic moment and magnetic entropy and -log T-behaviors observed in Kondo materials.Comment: 8 pages, 13 figure

Correlation between Geometrically induced oxygen octahedral tilts and multiferroic behaviors in BiFeO3 films

The equilibrium position of atoms in a unit cell is directly connected to crystal functionalities, e.g., ferroelectricity, ferromagnetism, and piezoelectricity. The artificial tuning of the energy landscape can involve repositioning atoms as well as manipulating the functionalities of perovskites (ABO3), which are good model systems to test this legacy. Mechanical energy from external sources accommodating various clamping substrates is utilized to perturb the energy state of perovskite materials fabricated on the substrates and consequently change their functionalities; however, this approach yields undesired complex behaviors of perovskite crystals, such as lattice distortion, displacement of B atoms, and/or tilting of oxygen octahedra. Owing to complimentary collaborations between experimental and theoretical studies, the effects of both lattice distortion and displacement of B atoms are well understood so far, which leaves us a simple question: Can we exclusively control the positions of oxygen atoms in perovskites for functionality manipulation? Here the artificial manipulation of oxygen octahedral tilt angles within multiferroic BiFeO3 thin films using strong oxygen octahedral coupling with bottom SrRuO3 layers is reported, which opens up new possibilities of oxygen octahedral engineering

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential

Thermoelectric properties of p-type PbTe/Ag2Te bulk composites by extrinsic phase mixing

We investigated the thermoelectric properties of PbTe/Ag2Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag2Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe)1−x(Ag2Te)x composites, synthesized by high temperature phase separation, the PbTe/Ag2Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag2Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe)1−x(Ag2Te)x bulk composites