Delayed avalanches in Multi-Pixel Photon Counters

Hamamatsu Photonics introduced a new generation of their Multi-Pixel Photon Counters in 2013 with significantly reduced after-pulsing rate. In this paper, we investigate the causes of after-pulsing by testing pre-2013 and post-2013 devices using laser light ranging from 405 to 820nm. Doing so we investigate the possibility that afterpulsing is also due to optical photons produced in the avalanche rather than to impurities trapping charged carriers produced in the avalanches and releasing them at a later time. For pre-2013 devices, we observe avalanches delayed by ns to several 100~ns at 637, 777nm and 820 nm demonstrating that holes created in the zero field region of the silicon bulk can diffuse back to the high field region triggering delayed avalanches. On the other hand post-2013 exhibit no delayed avalanches beyond 100~ns at 777nm. We also confirm that post-2013 devices exhibit about 25 times lower after-pulsing. Taken together, our measurements show that the absorption of photons from the avalanche in the bulk of the silicon and the subsequent hole diffusion back to the junction was a significant source of after-pulse for the pre-2013 devices. Hamamatsu appears to have fixed this problem in 2013 following the preliminary release of our results. We also show that even at short wavelength the timing distribution exhibit tails in the sub-nanosecond range that may impair the MPPC timing performances.Comment: Submitted to JINST, 14 pages, 16 figure

Novel integrated CMOS pixel structures for vertex detectors

Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections

Simulation Study of Photon-to-Digital Converter (PDC) Timing Specifications for LoLX Experiment

The Light only Liquid Xenon (LoLX) experiment is a prototype detector aimed to study liquid xenon (LXe) light properties and various photodetection technologies. LoLX is also aimed to quantify LXe's time resolution as a potential scintillator for 10~ps time-of-flight (TOF) PET. Another key goal of LoLX is to perform a time-based separation of Cerenkov and scintillation photons for new background rejection methods in LXe experiments. To achieve this separation, LoLX is set to be equipped with photon-to-digital converters (PDCs), a photosensor type that provides a timestamp for each observed photon. To guide the PDC design, we explore requirements for time-based Cerenkov separation. We use a PDC simulator, whose input is the light information from the Geant4-based LoLX simulation model, and evaluate the separation quality against time-to-digital converter (TDC) parameters. Simulation results with TDC parameters offer possible configurations supporting a good separation. Compared with the current filter-based approach, simulations show Cerenkov separation level increases from 54% to 71% when using PDC and time-based separation. With the current photon time profile of LoLX simulation, the results also show 71% separation is achievable with just 4 TDCs per PDC. These simulation results will lead to a specification guide for the PDC as well as expected results to compare against future PDC-based experimental measurements. In the longer term, the overall LoLX results will assist large LXe-based experiments and motivate the assembly of a LXe-based TOF-PET demonstrator system.Comment: 5 pages, 7 figure

ETUDE DES PROCESSUS D'EMISSION DES PIONS DANS LES COLLISIONS PB + PB A 17.3 AGEV, ET SON PROLONGEMENT AUX COLLISIONS AU + AU A 200 AGEV, A TRAVERS LA CARACTERISATION DES DETECTEURS AU SILICIUM A MICROPISTES DE L'EXPERIENCE STAR

NANTES-BU Sciences (441092104) / SudocSudocFranceF

Evaluation of very highly pixellated crystal blocks with SiPM readout as candidates for PET/MR detectors in a small animal PET insert

Arrays of silicon photo-multipliers (SiPMs) are good candidates for the readout of detectors in PET MR inserts due to their high packing density, efficiency, low bias voltage and insensitivity to magnetic fields. In this study we report the readout performance of SensL SiPM arrays in terms of their ability to resolve all elements of pixellated lutetium oxyorthosilicate (LYSO) crystals their energy resolution, and coincidence response function. Two SensL SPMarray-4 were used as light sensors. Two LYSO crystal blocks consisting of a arrays of 8 78 1.2 mm 7 1.2 mm 7 6.0 mm crystals on the lower layer and 7 77 1.2 mm 7 1.2 mm 7 4.0 mm crystals on the upper layer (which is offset by 1/2 the crystal width) were mounted on the SensL arrays. A second study was performed with single layer arrays of 8 78 1.2 mm 7 1.2 mm 7 10.0 mm crystals. All of the crystals in the dual layer block were easily identified with a peak to valley ratio of 7.2 while the single layer blocks had a peak to valley ratio of 11.2. The crystal dots were more uniformly spaced in the dual layer arrays suggesting that the inter-layer connection affords some useful light sharing. The average energy resolution for all 113 crystals was 16.3\ub12.3%. The coincidence response to a 0.25 mm Na-22 source in plastic was 0.97 \ub10.12 mm for normally incident gamma rays with the detectors 120 mm apart. These results indicate that it should be possible to achieve a spatial resolution of about one millimetre near the center of the field of view. \ua9 2012 IEEE.Peer reviewed: YesNRC publication: Ye

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Simulation guided optimization of Dual Layer Offset detector design for use in small animal PET

A small animal PET insert for use inside of a small MR bore is currently in the design phase. The small diameter of the tomograph results in an increased need to collect Depth of Interaction (DOI) information to mitigate the parallax error. The tomograph will use a Dual Layer Offset block design to collect DOI information. Of critical importance to the design of the block is the depth into the block where the front layer is separated from the back layer. With the total thickness of scintillating crystal limited to 10 mm, GATE simulations with a single block were run with the front layer thickness ranging from 1 mm to 10 mm (single layer). These simulations characterized the block's ability to accurately locate the radial coordinate of the first interaction location of a `single'. It was found that a split between front and back that is roughly even minimized the mispositioning of the radial coordinate of first interaction. To estimate the reconstructed resolution and resolution uniformity obtainable with this block design, coincidence data from a full tomograph were simulated. Data were reconstructed using Filtered Back Projection. Data were also reconstructed with the DOI information discarded to estimate the improvement in resolution uniformity obtained with this block design.Peer reviewed: YesNRC publication: Ye

A CMOS Active Pixel Sensor for Charged Particle Detection

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector