Cleaning optimization for reduced chemical usage

The use of dilute SC-1 (NH40H:H202:H20) chemistry cleaning processes for particle removal from silicon surfaces has been investigated. Dilute chemistries can be highly effective, especially when high- frequency acoustic energy (megasonics) is applied. The high particle removal efficacy of the dilute chemistry processes presumably arises due to increased double layer effects caused by reduced ionic strength. Dilute chemistry SC- I solutions exhibit somewhat reduced efficacy for removal of certain light organics; however, when dilute SC-1 is used along with other pre-gate cleaning steps (e.g. HF, SC-2, and piranha), then the overall cleaning sequence is quite effective. In addition to providing robust cleaning processes, dilute chemistries also result in significantly lower chemical and rinse water usage. Waste water treatment requirements are also lessened when dilute chemistry cleaning solutions are employed

Evaluation of post-ashed photoresist cleaning using oxidizing chemistries

The use of sulfuric acid based chemistries for the removal of photoresist ashing residue was investigated. Samples were prepared by ion-implanting patterned, UV-hardened photoresist. The efficacy of post-ash cleaning was determined by measuring organic, metallic, and particulate surface concentrations. Sulfuric-nitric mixtures and sulfuric-hydrogen peroxide mixtures were highly effective for the removal of metallic contaminants. Neither chemistry was very effective for particulate and organic residue. Highly effective overall cleaning was observed when a sulfuric acid based clean was followed with an RCA-type process sequence. Redundant cleans provided no additional benefits. Post-ash cleaning may be simplified by either reducing the number of sulfuric acid based cleans, or for certain post-ash applications, by replacing them with RCA-type processes

Minimizing sulfur contamination and rinse water volume required following a sulfuric acid/hydrogen peroxide clean by performing a chemically basic rinse

Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off wafer surfaces. Various rinsing conditions were tested and the resulting residual contamination on the wafer surface was measured. The addition of small amounts of a chemical base such as ammonium hydroxide to the rinse water has been found to be effective in reducing the surface concentration of sulfur and also mitigates the particle growth that occurs on SPM cleaned wafers. The volume of room temperature water required to rinse these wafers is also significantly reduced

A study of light point defect removal by SC-1 chemistries

Recent research has shown that dilute SC-1 chemistries, when combined with high frequency sonication (megasonics) can be highly effective for particle removal. The mechanism by which the SC-1 chemistry facilitates particle removal remains unclear. Experiments were performed under extremely dilute conditions in order to help elucidate a cleaning mechanism. Results indicate that hydrogen peroxide, under extremely dilute conditions, is not necessary for effective particle removal. The increase in haze commonly attributed to increased surface roughness is not observed when sufficiently dilute ammonium hydroxide (e.g., 1:2700) is used. The role of hydrogen peroxide, when more concentrated chemistries are used, may be simply to mitigate surface etching and roughening, rather than to play an active role in particle removal

Particle-surface interactions in chemical mechanical polishing

Material removal in chemical mechanical polishing (CMP) occurs by a pressure accentuated chemical attack of the surface. The polishing slurry typically consists of abrasive particles and reactive chemicals that may or may not include an oxidant. Post-CMP cleaning processes must remove both the ionic contaminants and any remaining polishing slurry particles. Central to the effectiveness of a clean is the use of conditions that will minimize the binding force between the residual particles and the wafer surface. The morphology and composition of the particle, the surface from which it must be removed, and the environment surrounding the wafer will determine the magnitude of forces that hold a particle to the wafer surface. At the Sandia/SEMATECH Center for Contamination Free Manufacturing, two techniques--atomic force microscopy (AFM) and electrokinetic deposition--are being used to explore these interactions for CMP of both oxide and tungsten surfaces. A basic understanding of particle-surface interaction forces and how they are affected by the chemical/physical environment of the particle and surface is the objective of this task. Modification of the binding forces between particles and wafer surfaces may be used to maximize post-CMP cleaning effectiveness