The branch processes of vortex filaments and Hopf Invariant Constraint on Scroll Wave

In this paper, by making use of Duan's topological current theory, the evolution of the vortex filaments in excitable media is discussed in detail. The vortex filaments are found generating or annihilating at the limit points and encountering, splitting, or merging at the bifurcation points of a complex function $Z(\vec{x},t)$. It is also shown that the Hopf invariant of knotted scroll wave filaments is preserved in the branch processes (splitting, merging, or encountering) during the evolution of these knotted scroll wave filaments. Furthermore, it also revealed that the "exclusion principle" in some chemical media is just the special case of the Hopf invariant constraint, and during the branch processes the "exclusion principle" is also protected by topology.Comment: 9 pages, 5 figure

Effect of deposition conditions and thermal annealing on the charge trapping properties of SiN[sub x] films

The density of charge trapping centers in SiNx:H films deposited by plasma enhanced chemical vapor deposition is investigated as a function of film stoichiometry and postdeposition annealing treatments. In the as-deposited films, the defect density is observed to increase with an increasing N/Si ratio x in the range of 0.89–1.45, and to correlate with the N–H bond density. Following the annealing in the temperature range of 500– 800 °C, the defect density increases for all N/Si ratios, with the largest increase observed in the most Si rich samples. However, the defect density always remains highest in the most N rich films. The better charge storage ability suggests the N rich films are more suitable for the creation of negatively charged nitride films on solar cells.Financial support from the Australian Research Council LP0883613 is gratefully acknowledged

Superconductivity in heavily boron-doped silicon carbide

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.Comment: 9 pages, 5 figure

High-Efficient Parallel CAVLC Encoders on Heterogeneous Multicore Architectures

This article presents two high-efficient parallel realizations of the context-based adaptive variable length coding (CAVLC) based on heterogeneous multicore processors. By optimizing the architecture of the CAVLC encoder, three kinds of dependences are eliminated or weaken, including the context-based data dependence, the memory accessing dependence and the control dependence. The CAVLC pipeline is divided into three stages: two scans, coding, and lag packing, and be implemented on two typical heterogeneous multicore architectures. One is a block-based SIMD parallel CAVLC encoder on multicore stream processor STORM. The other is a component-oriented SIMT parallel encoder on massively parallel architecture GPU. Both of them exploited rich data-level parallelism. Experiments results show that compared with the CPU version, more than 70 times of speedup can be obtained for STORM and over 50 times for GPU. The implementation of encoder on STORM can make a real-time processing for 1080p @30fps and GPU-based version can satisfy the requirements for 720p real-time encoding. The throughput of the presented CAVLC encoders is more than 10 times higher than that of published software encoders on DSP and multicore platforms

Recurrence interval analysis of high-frequency financial returns and its application to risk estimation

We investigate the probability distributions of the recurrence intervals $\tau$ between consecutive 1-min returns above a positive threshold $q>0$ or below a negative threshold $q<0$ of two indices and 20 individual stocks in China's stock market. The distributions of recurrence intervals for positive and negative thresholds are symmetric, and display power-law tails tested by three goodness-of-fit measures including the Kolmogorov-Smirnov (KS) statistic, the weighted KS statistic and the Cram\'er-von Mises criterion. Both long-term and shot-term memory effects are observed in the recurrence intervals for positive and negative thresholds $q$. We further apply the recurrence interval analysis to the risk estimation for the Chinese stock markets based on the probability $W_q(\Delta{t},t)$, Value-at-Risk (VaR) analysis and VaR analysis conditioned on preceding recurrence intervals.Comment: 17 pages, 10 figures, 1 tabl