Large-Scale Asset Purchases by the Federal Reserve: Did They Work?

Discusses how the Federal Reserve faced the challenge to further ease the stance of monetary policy as the economic outlook deteriorated through LSAPs

Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

International audienceThe improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a single crystalline silicon substrate. The measurement of the total reflectivity (R T) on Si/PS surface showed a significant improvement in optical confinement compared to that measured on Si/standard Al back surface field (BSF). The internal reflectivity (R B) extracted from total reflectivity measurements achieved 86 % for the optimized single PS layer (92 nm thick layer with 60 % porosity) in the wavelength range between 950 and 1200 nm. This improvement was estimated as more than 17 % compared to that measured on the surface of Si/BSF Al contact. To improve the stability and passivation properties of PS layer BR, silicon nitride layer (SiN x) was deposited by PECVD on a PS layer. The maximum measured total reflectivity for PS/SiN x achieved approximately 56 % corresponding to an improved R B of up to 83 %. The PS formation process in combination with the PECVD SiN x , can be applied in the photovoltaic cell technology and offer a promising technique to produce high-efficiency and low-cost c-Si solar cells

Erratum to: The Intensive Care Global Study on Severe Acute Respiratory Infection (ICâGLOSSARI): a multicenter, multinational, 14-day inception cohort study (Intensive Care Medicine, (2016), 42, 5, (953), 10.1007/s00134-016-4317-4)

In both the original publication (DOI 10.1007/s00134-015-4206-2) and the first erratum (DOI 10.1007/s00134-016-4317-4), the members of the IC-GLOSSARI Investigators and the ESICM Trials Group were provided in such a way that they could not be indexed as collaborators on PubMed. The publisher apologizes for these errors and is pleased to list the members of the groups here: (Table presented.)

International Nosocomial Infection Control Consortiu (INICC) report, data summary of 43 countries for 2007-2012. Device-associated module

We report the results of an International Nosocomial Infection Control Consortium (INICC) surveillance study from January 2007-December 2012 in 503 intensive care units (ICUs) in Latin America, Asia, Africa, and Europe. During the 6-year study using the Centers for Disease Control and Prevention's (CDC) U.S. National Healthcare Safety Network (NHSN) definitions for device-associated health care–associated infection (DA-HAI), we collected prospective data from 605,310 patients hospitalized in the INICC's ICUs for an aggregate of 3,338,396 days. Although device utilization in the INICC's ICUs was similar to that reported from ICUs in the U.S. in the CDC's NHSN, rates of device-associated nosocomial infection were higher in the ICUs of the INICC hospitals: the pooled rate of central line–associated bloodstream infection in the INICC's ICUs, 4.9 per 1,000 central line days, is nearly 5-fold higher than the 0.9 per 1,000 central line days reported from comparable U.S. ICUs. The overall rate of ventilator-associated pneumonia was also higher (16.8 vs 1.1 per 1,000 ventilator days) as was the rate of catheter-associated urinary tract infection (5.5 vs 1.3 per 1,000 catheter days). Frequencies of resistance of Pseudomonas isolates to amikacin (42.8% vs 10%) and imipenem (42.4% vs 26.1%) and Klebsiella pneumoniae isolates to ceftazidime (71.2% vs 28.8%) and imipenem (19.6% vs 12.8%) were also higher in the INICC's ICUs compared with the ICUs of the CDC's NHSN