Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300⁻550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior

Study of charge carrier transport in GaN sensors

Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

The evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented

THz Filters Made by Laser Ablation of Stainless Steel and Kapton Film

THz band-pass filters were fabricated by femtosecond-laser ablation of 25-μm-thick micro-foils of stainless steel and Kapton film, which were subsequently metal coated with a ∼70 nm film, closely matching the skin depth at the used THz spectral window. Their spectral performance was tested in transmission and reflection modes at the Australian Synchrotron’s THz beamline. A 25-μm-thick Kapton film performed as a Fabry–Pérot etalon with a free spectral range (FSR) of 119 cm−1, high finesse Fc≈17, and was tuneable over ∼10μm (at ∼5 THz band) with β=30∘ tilt. The structure of the THz beam focal region as extracted by the first mirror (slit) showed a complex dependence of polarisation, wavelength and position across the beam. This is important for polarisation-sensitive measurements (in both transmission and reflection) and requires normalisation at each orientation of linear polarisation