26 research outputs found
Electronic and optical properties of isostructural beta FeSi2 and OsSi2
We present both theoretical and experimental investigations of electronic and optical properties of isostructural
b-FeSi2 and OsSi2 by means of a full-potential linear augmented plane wave method and optical measurements.
We report also ellipsometric and reflectance measurements on samples of polycrystalline osmium
disilicide prepared by mechanical alloying. From ab initio calculations these compounds are found to be
indirect band-gap semiconductors with the fundamental gap of OsSi2 larger some 0.3–0.4 eV than the one of
b-FeSi2. In addition to that, a low value of the oscillator strength is predicted for the first direct transitions in
both cases. Computed optical functions for these materials were compared to the ones deduced from optical
measurements, indicating very good agreement and the presence of some anisotropic effects
Structural, electronic, and optical Properties of beta Fe1 xCox Si2
Structural, Electronic, and Optical Properties of amp; 946; Fe1 xCox Si
Structural, electronic and optical properties of semiconducting rhenium silicide
Structural, Electronic and Optical Properties of Semiconducting Rhenium Silicid
Excitonic transitions in Beta FeSi2 epitaxial films and single crystals
Excitonic Transitions in FeSi2 Epitaxial Films and Single Crystal