16 research outputs found
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Extracellular vesicles transfer nuclear Abl-dependent and radiation-induced miR-34c into unirradiated cells to cause bystander effects.
Ionizing radiation (IR) not only activates DNA damage response (DDR) in irradiated cells but also induces bystander effects (BE) in cells not directly targeted by radiation. How DDR pathways activated in irradiated cells stimulate BE is not well understood. We show here that extracellular vesicles secreted by irradiated cells (EV-IR), but not those from unirradiated controls (EV-C), inhibit colony formation in unirradiated cells by inducing reactive oxygen species (ROS). We found that ĀµEV-IR from Abl nuclear localization signal-mutated ( Abl-ĀµNLS) cells could not induce ROS, but expression of wild-type Abl restored that activity. Because nuclear Abl stimulates miR-34c biogenesis, we measured miR-34c in EV and found that its levels correlated with the ROS-inducing activity of EV. We then showed that EV from miR-34c minigene-transfected, but unirradiated cells induced ROS; and transfection with miR-34c-mimic, without radiation or EV addition, also induced ROS. Furthermore, EV-IR from miR34-family triple-knockout cells could not induce ROS, whereas EV-IR from wild-type cells could cause miR-34c increase and ROS induction in the miR-34 triple-knockout cells. These results establish a novel role for extracellular vesicles in transferring nuclear Abl-dependent and radiation-induced miR-34c into unirradiated cells to cause bystander oxidative stress
Unravelling the genome of Holy basil: an āincomparableā āelixir of lifeā of traditional Indian medicine
Extracellular vesicles transfer nuclear Abl-dependent and radiation-induced miR-34c into unirradiated cells to cause bystander effects
Recommended from our members
Extracellular vesicles transfer nuclear Abl-dependent and radiation-induced miR-34c into unirradiated cells to cause bystander effects.
Ionizing radiation (IR) not only activates DNA damage response (DDR) in irradiated cells but also induces bystander effects (BE) in cells not directly targeted by radiation. How DDR pathways activated in irradiated cells stimulate BE is not well understood. We show here that extracellular vesicles secreted by irradiated cells (EV-IR), but not those from unirradiated controls (EV-C), inhibit colony formation in unirradiated cells by inducing reactive oxygen species (ROS). We found that ĀµEV-IR from Abl nuclear localization signal-mutated ( Abl-ĀµNLS) cells could not induce ROS, but expression of wild-type Abl restored that activity. Because nuclear Abl stimulates miR-34c biogenesis, we measured miR-34c in EV and found that its levels correlated with the ROS-inducing activity of EV. We then showed that EV from miR-34c minigene-transfected, but unirradiated cells induced ROS; and transfection with miR-34c-mimic, without radiation or EV addition, also induced ROS. Furthermore, EV-IR from miR34-family triple-knockout cells could not induce ROS, whereas EV-IR from wild-type cells could cause miR-34c increase and ROS induction in the miR-34 triple-knockout cells. These results establish a novel role for extracellular vesicles in transferring nuclear Abl-dependent and radiation-induced miR-34c into unirradiated cells to cause bystander oxidative stress
Interactions of Apoptotic Cells with Macrophages in Radiation-Induced Bystander Signaling
Interactions of Apoptotic Cells with Macrophages in Radiation-Induced Bystander Signaling
Bystander-Type Effects Mediated by Long-Lived Inflammatory Signaling in Irradiated Bone Marrow
Structural and opto-electronic features of pulsed laser ablation grown Cu2ZnSnS4 films for photovoltaic applications
We report synthesis of Cu2ZnSnS4 thin films of kesterite structure by sulfurization of pulsed laser deposited (PLD) CuZnSn composite films at optimized temperature. These films show sharp optical absorption edge in the range of 1.4-1.6 eV, when prepared under optimized conditions of deposition and sulfurization. In general, the processed films are found to be non-stoichiometric with deficiency of S and excess of Zn. Electrical conductivity measurements in the temperature range 50-300 K reveal hopping transport with activation energies <= 20 meV at T < 80 K and a room temperature resistivity varying from 0.1 to 2.7 Omega-cm