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    The Ability of Quantum Dots Formation in Thin Nanostructured Amorphous Films

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    In the last years an interest in field of quantum dots devices creating has been increased. In this work the nanocrystallite with Frank-Kasper structure was examined as the quantum dot in amorphous film. An ability to create all-inorganic Quantum Dots Light Emission Device may be considered for Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films. The self-organisation of atomic structure in Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films, which possess large values of perpendicular magnetic anisotropy (PMA) constant (K βŠ₯ ~ 10 erg/cm ), were investigated by methods of electron diffraction and transmission electron microscopy, including the method of bend contours. The crystallization of the films proceeds in an explosive way forming different dissipative structures from initial nanocrystalline state. In previous works [2, 3] it was shown that after crystallization (Π’ ann ~ 260-330 Β°C) the atomic structures of Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films are tetrahedrally close-packed Frank-Kasper structures. In this work the structural model of thin film at mesoscale and its correlation with magnetic and optical properties is proposed.Π’ послСдниС Π³ΠΎΠ΄Ρ‹ большой интСрСс ΠΏΡ€ΠΈΠ²Π»Π΅ΠΊΠ°ΡŽΡ‚ исслСдования, связанныС с устройствами, Ρ€Π°Π±ΠΎΡ‚Π°ΡŽΡ‰ΠΈΠΌΠΈ Π½Π° ΠΊΠ²Π°Π½Ρ‚ΠΎΠ²Ρ‹Ρ… Ρ‚ΠΎΡ‡ΠΊΠ°Ρ…. Π’ Π΄Π°Π½Π½ΠΎΠΉ ΡΡ‚Π°Ρ‚ΡŒΠ΅ нанокристаллиты со структурами Π€Ρ€Π°Π½ΠΊΠ°-ΠšΠ°ΡΠΏΠ΅Ρ€Π° исслСдованы ΠΊΠ°ΠΊ ΠΊΠ²Π°Π½Ρ‚ΠΎΠ²Ρ‹Π΅ Ρ‚ΠΎΡ‡ΠΊΠΈ Π² Π°ΠΌΠΎΡ€Ρ„Π½Ρ‹Ρ… ΠΏΠ»Π΅Π½ΠΊΠ°Ρ…. Π’ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡ‚ΡŒ создания эмиссионных устройств Π½Π° ΠΏΠΎΠ»Π½ΠΎΡΡ‚ΡŒΡŽ нСорганичСских ΠΊΠ²Π°Π½Ρ‚ΠΎΠ²Ρ‹Ρ… Ρ‚ΠΎΡ‡ΠΊΠ°Ρ… ΠΌΠΎΠΆΠ΅Ρ‚ Π±Ρ‹Ρ‚ΡŒ рассмотрСна для Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 ΠΏΠ»Π΅Π½ΠΎΠΊ. Бамоорганизация атомнойструктуры Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π² ΠΏΠ»Π΅Π½ΠΊΠ°Ρ…, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ ΠΎΠ±Π»Π°Π΄Π°ΡŽΡ‚ высокими значСниями константы, пСрпСндикулярной ΠΌΠ°Π³Π½ΠΈΡ‚Π½ΠΎΠΉ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠΈΠΈ (ПМА) K βŠ₯ ~ 10 эрг/см , исслСдованы ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ элСктронной Π΄ΠΈΡ„Ρ€Π°ΠΊΡ†ΠΈΠΈ ΠΈ ΠΏΡ€ΠΎΡΠ²Π΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰Π΅ΠΉ элСктронной микроскопии, Π²ΠΊΠ»ΡŽΡ‡Π°Ρ ΠΌΠ΅Ρ‚ΠΎΠ΄ ΠΈΠ·Π³ΠΈΠ±Π½Ρ‹Ρ… ΠΊΠΎΠ½Ρ‚ΡƒΡ€ΠΎΠ². ΠŸΡ€ΠΎΡ†Π΅ΡΡΡ‹ Π²Π·Ρ€Ρ‹Π²Π½ΠΎΠΉ кристаллизации Π°ΠΌΠΎΡ€Ρ„Π½Ρ‹Ρ… ΠΏΠ»Π΅Π½ΠΎΠΊ Ρ„ΠΎΡ€ΠΌΠΈΡ€ΡƒΡŽΡ‚ Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Π΅ диссипативныС структуры ΠΈΠ· нанокристалличСских Π·Π°Ρ€ΠΎΠ΄Ρ‹ΡˆΠ΅ΠΉ. Π’ ΠΏΡ€Π΅Π΄Ρ‹Π΄ΡƒΡ‰ΠΈΡ… Ρ€Π°Π±ΠΎΡ‚Π°Ρ… [2, 3] Π±Ρ‹Π»ΠΎ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΎ, Ρ‡Ρ‚ΠΎ послС кристаллизации (Π’ ΠΎΡ‚ΠΆΠΈΠ³Π° ~ 260-330 Β°C) атомная структура Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π±Ρ‹Π»Π° ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Π° ΠΊΠ°ΠΊ тСтраэдричСски ΠΏΠ»ΠΎΡ‚Π½ΠΎ упакованная структура Π€Ρ€Π°Π½ΠΊΠ° ΠšΠ°ΡΠΏΠ΅Ρ€Π°. Π’ этих Ρ€Π°Π±ΠΎΡ‚Π°Ρ… структурныС ΠΌΠΎΠ΄Π΅Π»ΠΈ Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Π΅Π½ΠΎΠΊ, созданныС для ΠΌΠΈΠΊΡ€ΠΎ-ΠΈ ΠΌΠ΅Π·ΠΎΠΌΠ°ΡΡˆΡ‚Π°Π±ΠΎΠ² ΡΠ²ΡΠ·Ρ‹Π²Π°ΡŽΡ‚ΡΡ с ΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹ΠΌΠΈ ΠΈ оптичСскими свойствами ΠΏΠ»Π΅Π½ΠΎΠΊ

    The Ability of Quantum Dots Formation in Thin Nanostructured Amorphous Films

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    In the last years an interest in field of quantum dots devices creating has been increased. In this work the nanocrystallite with Frank-Kasper structure was examined as the quantum dot in amorphous film. An ability to create all-inorganic Quantum Dots Light Emission Device may be considered for Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films. The self-organisation of atomic structure in Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films, which possess large values of perpendicular magnetic anisotropy (PMA) constant (K βŠ₯ ~ 10 erg/cm ), were investigated by methods of electron diffraction and transmission electron microscopy, including the method of bend contours. The crystallization of the films proceeds in an explosive way forming different dissipative structures from initial nanocrystalline state. In previous works [2, 3] it was shown that after crystallization (Π’ ann ~ 260-330 Β°C) the atomic structures of Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films are tetrahedrally close-packed Frank-Kasper structures. In this work the structural model of thin film at mesoscale and its correlation with magnetic and optical properties is proposed.Π’ послСдниС Π³ΠΎΠ΄Ρ‹ большой интСрСс ΠΏΡ€ΠΈΠ²Π»Π΅ΠΊΠ°ΡŽΡ‚ исслСдования, связанныС с устройствами, Ρ€Π°Π±ΠΎΡ‚Π°ΡŽΡ‰ΠΈΠΌΠΈ Π½Π° ΠΊΠ²Π°Π½Ρ‚ΠΎΠ²Ρ‹Ρ… Ρ‚ΠΎΡ‡ΠΊΠ°Ρ…. Π’ Π΄Π°Π½Π½ΠΎΠΉ ΡΡ‚Π°Ρ‚ΡŒΠ΅ нанокристаллиты со структурами Π€Ρ€Π°Π½ΠΊΠ°-ΠšΠ°ΡΠΏΠ΅Ρ€Π° исслСдованы ΠΊΠ°ΠΊ ΠΊΠ²Π°Π½Ρ‚ΠΎΠ²Ρ‹Π΅ Ρ‚ΠΎΡ‡ΠΊΠΈ Π² Π°ΠΌΠΎΡ€Ρ„Π½Ρ‹Ρ… ΠΏΠ»Π΅Π½ΠΊΠ°Ρ…. Π’ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡ‚ΡŒ создания эмиссионных устройств Π½Π° ΠΏΠΎΠ»Π½ΠΎΡΡ‚ΡŒΡŽ нСорганичСских ΠΊΠ²Π°Π½Ρ‚ΠΎΠ²Ρ‹Ρ… Ρ‚ΠΎΡ‡ΠΊΠ°Ρ… ΠΌΠΎΠΆΠ΅Ρ‚ Π±Ρ‹Ρ‚ΡŒ рассмотрСна для Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 ΠΏΠ»Π΅Π½ΠΎΠΊ. Бамоорганизация атомнойструктуры Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π² ΠΏΠ»Π΅Π½ΠΊΠ°Ρ…, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ ΠΎΠ±Π»Π°Π΄Π°ΡŽΡ‚ высокими значСниями константы, пСрпСндикулярной ΠΌΠ°Π³Π½ΠΈΡ‚Π½ΠΎΠΉ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠΈΠΈ (ПМА) K βŠ₯ ~ 10 эрг/см , исслСдованы ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ элСктронной Π΄ΠΈΡ„Ρ€Π°ΠΊΡ†ΠΈΠΈ ΠΈ ΠΏΡ€ΠΎΡΠ²Π΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰Π΅ΠΉ элСктронной микроскопии, Π²ΠΊΠ»ΡŽΡ‡Π°Ρ ΠΌΠ΅Ρ‚ΠΎΠ΄ ΠΈΠ·Π³ΠΈΠ±Π½Ρ‹Ρ… ΠΊΠΎΠ½Ρ‚ΡƒΡ€ΠΎΠ². ΠŸΡ€ΠΎΡ†Π΅ΡΡΡ‹ Π²Π·Ρ€Ρ‹Π²Π½ΠΎΠΉ кристаллизации Π°ΠΌΠΎΡ€Ρ„Π½Ρ‹Ρ… ΠΏΠ»Π΅Π½ΠΎΠΊ Ρ„ΠΎΡ€ΠΌΠΈΡ€ΡƒΡŽΡ‚ Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Π΅ диссипативныС структуры ΠΈΠ· нанокристалличСских Π·Π°Ρ€ΠΎΠ΄Ρ‹ΡˆΠ΅ΠΉ. Π’ ΠΏΡ€Π΅Π΄Ρ‹Π΄ΡƒΡ‰ΠΈΡ… Ρ€Π°Π±ΠΎΡ‚Π°Ρ… [2, 3] Π±Ρ‹Π»ΠΎ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΎ, Ρ‡Ρ‚ΠΎ послС кристаллизации (Π’ ΠΎΡ‚ΠΆΠΈΠ³Π° ~ 260-330 Β°C) атомная структура Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π±Ρ‹Π»Π° ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Π° ΠΊΠ°ΠΊ тСтраэдричСски ΠΏΠ»ΠΎΡ‚Π½ΠΎ упакованная структура Π€Ρ€Π°Π½ΠΊΠ° ΠšΠ°ΡΠΏΠ΅Ρ€Π°. Π’ этих Ρ€Π°Π±ΠΎΡ‚Π°Ρ… структурныС ΠΌΠΎΠ΄Π΅Π»ΠΈ Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Π΅Π½ΠΎΠΊ, созданныС для ΠΌΠΈΠΊΡ€ΠΎ-ΠΈ ΠΌΠ΅Π·ΠΎΠΌΠ°ΡΡˆΡ‚Π°Π±ΠΎΠ² ΡΠ²ΡΠ·Ρ‹Π²Π°ΡŽΡ‚ΡΡ с ΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹ΠΌΠΈ ΠΈ оптичСскими свойствами ΠΏΠ»Π΅Π½ΠΎΠΊ

    ASSOCIATION OF GENETIC POLYMORPHISMS WITH COMPLICATIONS OF IMPLANTED LVAD DEVICES IN PATIENTS WITH CONGESTIVE HEART FAILURE: A KAZAKHSTANI STUDY

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    The left ventricular assist device (LVAD) is one of the alternative treatments for heart failure (HF) patients. However, LVAD support is followed by thrombosis, and bleeding complications which are caused by high non-physiologic shear stress and antithrombotic/anticoagulant therapy. A high risk of complications occurs in the presence of the genotype polymorphisms which are involved in the coagulation system, hemostasis function and in the metabolism of the therapy. The aim of the study was to investigate the influence of single-nucleotide polymorphisms (SNP) in HF patients with LVAD complications. We analyzed 21 SNPs in HF patients (n = 98) with/without complications, and healthy controls (n = 95). SNPs rs9934438; rs9923231 in VKORC1, rs5918 in ITGB3 and rs2070959 in UGT1A6 demonstrated significant association with HF patients’ complications (OR (95% CI): 3.96 (1.42–11.02), p = 0.0057), (OR (95% CI): 3.55 (1.28–9.86), p = 0.011), (OR (95% CI): 5.37 (1.79–16.16), p = 0.0056) and OR (95% CI): 4.40 (1.06–18.20), p = 0.044]. Genotype polymorphisms could help to predict complications at pre- and post-LVAD implantation period, which will reduce mortality rate. Our research showed that patients can receive treatment with warfarin and aspirin with a personalized dosage and LVAD complications can be predicted by reference to their genotype polymorphisms in VKORC1, ITGB3 and UGT1A6 genes

    Role of Genetic Polymorphisms in the Development of Complications in Patients with Implanted Left Ventricular Assist Devices: HeartWare, HeartMate II, and HeartMate 3

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    Left ventricular assist device (LVAD) implantation is one of the mechanical circulatory support (MCS) treatments for advanced heart failure (HF) patients. MCS has emerged as a lifesaving therapy that improves patients’ quality of life. However, MCS remains limited by a paradoxical coagulopathy accompanied by thrombosis and bleeding. The mechanisms of MCS thrombosis are increasingly being defined, but MCS-related bleeding, which is related to shear-mediated alteration of platelet function, remains poorly understood. Complications might develop due to the high non-physiological shear stress in the device and as a consequence of individual variability in response to the antithrombotic therapy. Thromboelastography (TEG) and genotyping of gene polymorphisms that are involved in the coagulation cascade and in the metabolism of the antithrombotic therapy might be valuable sources of information for the reduction of complication development. The aim of the study was to identify genetic factors related to the development of device complications according to the implanted LVAD type. We compared the clinical and genetic data of HF patients (n = 98) with/without complications with three types of implanted devices: HeartWare HVAD (HW), HeartMate II (HMII), and HeartMate 3 (HM3). rs9923231 in VKORC1 (95%CI βˆ’6.28–0.22, p = 0.04) and rs5918 in ITGB3 genes (95%CI 0.003–4.36, p = 0.05) showed significant association with the TEG coagulation index parameter, which identified hyper- and hypo-coagulation states. The wild genotype of rs5918 in the ITGB3 gene prevailed in patients implanted with HM3 devices, which developed fewer complications than with HMII (p = 0.04). Individual genetic information could be useful in the management of patients with HF and the implantation of MCS to reduce the development of complications.Journal of Clinical Medicine, 12(23), art. no. 7235; 202
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