4 research outputs found
The Ability of Quantum Dots Formation in Thin Nanostructured Amorphous Films
In the last years an interest in field of quantum dots devices creating has been increased. In this work the nanocrystallite with Frank-Kasper structure was examined as the quantum dot in amorphous film. An ability to create all-inorganic Quantum Dots Light Emission Device may be considered for Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films. The self-organisation of atomic structure in Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films, which possess large values of perpendicular magnetic anisotropy (PMA) constant (K β₯ ~ 10
erg/cm
), were investigated by methods of electron diffraction and transmission electron microscopy, including the method of bend contours. The crystallization of the films proceeds in an explosive way forming different dissipative structures from initial nanocrystalline state. In previous works [2, 3] it was shown that after crystallization (Π’ ann ~ 260-330 Β°C) the atomic structures of Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films are tetrahedrally close-packed Frank-Kasper structures. In this work the structural model of thin film at mesoscale and its correlation with magnetic and optical properties is proposed.Π ΠΏΠΎΡΠ»Π΅Π΄Π½ΠΈΠ΅ Π³ΠΎΠ΄Ρ Π±ΠΎΠ»ΡΡΠΎΠΉ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ ΠΏΡΠΈΠ²Π»Π΅ΠΊΠ°ΡΡ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ, ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ Ρ ΡΡΡΡΠΎΠΉΡΡΠ²Π°ΠΌΠΈ, ΡΠ°Π±ΠΎΡΠ°ΡΡΠΈΠΌΠΈ Π½Π° ΠΊΠ²Π°Π½ΡΠΎΠ²ΡΡ
ΡΠΎΡΠΊΠ°Ρ
. Π Π΄Π°Π½Π½ΠΎΠΉ ΡΡΠ°ΡΡΠ΅ Π½Π°Π½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΡ ΡΠΎ ΡΡΡΡΠΊΡΡΡΠ°ΠΌΠΈ Π€ΡΠ°Π½ΠΊΠ°-ΠΠ°ΡΠΏΠ΅ΡΠ° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΊΠ°ΠΊ ΠΊΠ²Π°Π½ΡΠΎΠ²ΡΠ΅ ΡΠΎΡΠΊΠΈ Π² Π°ΠΌΠΎΡΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
. ΠΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΡΠΎΠ·Π΄Π°Π½ΠΈΡ ΡΠΌΠΈΡΡΠΈΠΎΠ½Π½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² Π½Π° ΠΏΠΎΠ»Π½ΠΎΡΡΡΡ Π½Π΅ΠΎΡΠ³Π°Π½ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΊΠ²Π°Π½ΡΠΎΠ²ΡΡ
ΡΠΎΡΠΊΠ°Ρ
ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½Π° Π΄Π»Ρ Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 ΠΏΠ»Π΅Π½ΠΎΠΊ. Π‘Π°ΠΌΠΎΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΡ Π°ΡΠΎΠΌΠ½ΠΎΠΉΡΡΡΡΠΊΡΡΡΡ Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π² ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
, ΠΊΠΎΡΠΎΡΡΠ΅ ΠΎΠ±Π»Π°Π΄Π°ΡΡ Π²ΡΡΠΎΠΊΠΈΠΌΠΈ Π·Π½Π°ΡΠ΅Π½ΠΈΡΠΌΠΈ ΠΊΠΎΠ½ΡΡΠ°Π½ΡΡ, ΠΏΠ΅ΡΠΏΠ΅Π½Π΄ΠΈΠΊΡΠ»ΡΡΠ½ΠΎΠΉ ΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠΉ Π°Π½ΠΈΠ·ΠΎΡΡΠΎΠΏΠΈΠΈ (ΠΠΠ) K β₯ ~ 10
ΡΡΠ³/ΡΠΌ
, ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ Π΄ΠΈΡΡΠ°ΠΊΡΠΈΠΈ ΠΈ ΠΏΡΠΎΡΠ²Π΅ΡΠΈΠ²Π°ΡΡΠ΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΠΌΠΈΠΊΡΠΎΡΠΊΠΎΠΏΠΈΠΈ, Π²ΠΊΠ»ΡΡΠ°Ρ ΠΌΠ΅ΡΠΎΠ΄ ΠΈΠ·Π³ΠΈΠ±Π½ΡΡ
ΠΊΠΎΠ½ΡΡΡΠΎΠ². ΠΡΠΎΡΠ΅ΡΡΡ Π²Π·ΡΡΠ²Π½ΠΎΠΉ ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΠΈ Π°ΠΌΠΎΡΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΎΡΠΌΠΈΡΡΡΡ ΡΠ°Π·Π»ΠΈΡΠ½ΡΠ΅ Π΄ΠΈΡΡΠΈΠΏΠ°ΡΠΈΠ²Π½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΈΠ· Π½Π°Π½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
Π·Π°ΡΠΎΠ΄ΡΡΠ΅ΠΉ. Π ΠΏΡΠ΅Π΄ΡΠ΄ΡΡΠΈΡ
ΡΠ°Π±ΠΎΡΠ°Ρ
[2, 3] Π±ΡΠ»ΠΎ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠΎΡΠ»Π΅ ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΠΈ (Π’ ΠΎΡΠΆΠΈΠ³Π° ~ 260-330 Β°C) Π°ΡΠΎΠΌΠ½Π°Ρ ΡΡΡΡΠΊΡΡΡΠ° Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π±ΡΠ»Π° ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π° ΠΊΠ°ΠΊ ΡΠ΅ΡΡΠ°ΡΠ΄ΡΠΈΡΠ΅ΡΠΊΠΈ ΠΏΠ»ΠΎΡΠ½ΠΎ ΡΠΏΠ°ΠΊΠΎΠ²Π°Π½Π½Π°Ρ ΡΡΡΡΠΊΡΡΡΠ° Π€ΡΠ°Π½ΠΊΠ° ΠΠ°ΡΠΏΠ΅ΡΠ°. Π ΡΡΠΈΡ
ΡΠ°Π±ΠΎΡΠ°Ρ
ΡΡΡΡΠΊΡΡΡΠ½ΡΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΠΎΠ½ΠΊΠΈΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ, ΡΠΎΠ·Π΄Π°Π½Π½ΡΠ΅ Π΄Π»Ρ ΠΌΠΈΠΊΡΠΎ-ΠΈ ΠΌΠ΅Π·ΠΎΠΌΠ°ΡΡΡΠ°Π±ΠΎΠ² ΡΠ²ΡΠ·ΡΠ²Π°ΡΡΡΡ Ρ ΠΌΠ°Π³Π½ΠΈΡΠ½ΡΠΌΠΈ ΠΈ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΠΌΠΈ ΡΠ²ΠΎΠΉΡΡΠ²Π°ΠΌΠΈ ΠΏΠ»Π΅Π½ΠΎΠΊ
The Ability of Quantum Dots Formation in Thin Nanostructured Amorphous Films
In the last years an interest in field of quantum dots devices creating has been increased. In this work the nanocrystallite with Frank-Kasper structure was examined as the quantum dot in amorphous film. An ability to create all-inorganic Quantum Dots Light Emission Device may be considered for Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films. The self-organisation of atomic structure in Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films, which possess large values of perpendicular magnetic anisotropy (PMA) constant (K β₯ ~ 10
erg/cm
), were investigated by methods of electron diffraction and transmission electron microscopy, including the method of bend contours. The crystallization of the films proceeds in an explosive way forming different dissipative structures from initial nanocrystalline state. In previous works [2, 3] it was shown that after crystallization (Π’ ann ~ 260-330 Β°C) the atomic structures of Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C and Co 50 Pd 50 films are tetrahedrally close-packed Frank-Kasper structures. In this work the structural model of thin film at mesoscale and its correlation with magnetic and optical properties is proposed.Π ΠΏΠΎΡΠ»Π΅Π΄Π½ΠΈΠ΅ Π³ΠΎΠ΄Ρ Π±ΠΎΠ»ΡΡΠΎΠΉ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ ΠΏΡΠΈΠ²Π»Π΅ΠΊΠ°ΡΡ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ, ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ Ρ ΡΡΡΡΠΎΠΉΡΡΠ²Π°ΠΌΠΈ, ΡΠ°Π±ΠΎΡΠ°ΡΡΠΈΠΌΠΈ Π½Π° ΠΊΠ²Π°Π½ΡΠΎΠ²ΡΡ
ΡΠΎΡΠΊΠ°Ρ
. Π Π΄Π°Π½Π½ΠΎΠΉ ΡΡΠ°ΡΡΠ΅ Π½Π°Π½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΡ ΡΠΎ ΡΡΡΡΠΊΡΡΡΠ°ΠΌΠΈ Π€ΡΠ°Π½ΠΊΠ°-ΠΠ°ΡΠΏΠ΅ΡΠ° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΊΠ°ΠΊ ΠΊΠ²Π°Π½ΡΠΎΠ²ΡΠ΅ ΡΠΎΡΠΊΠΈ Π² Π°ΠΌΠΎΡΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
. ΠΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΡΠΎΠ·Π΄Π°Π½ΠΈΡ ΡΠΌΠΈΡΡΠΈΠΎΠ½Π½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² Π½Π° ΠΏΠΎΠ»Π½ΠΎΡΡΡΡ Π½Π΅ΠΎΡΠ³Π°Π½ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΊΠ²Π°Π½ΡΠΎΠ²ΡΡ
ΡΠΎΡΠΊΠ°Ρ
ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½Π° Π΄Π»Ρ Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 ΠΏΠ»Π΅Π½ΠΎΠΊ. Π‘Π°ΠΌΠΎΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΡ Π°ΡΠΎΠΌΠ½ΠΎΠΉΡΡΡΡΠΊΡΡΡΡ Co 80 C 20 , Tb 30 Fe 70 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π² ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
, ΠΊΠΎΡΠΎΡΡΠ΅ ΠΎΠ±Π»Π°Π΄Π°ΡΡ Π²ΡΡΠΎΠΊΠΈΠΌΠΈ Π·Π½Π°ΡΠ΅Π½ΠΈΡΠΌΠΈ ΠΊΠΎΠ½ΡΡΠ°Π½ΡΡ, ΠΏΠ΅ΡΠΏΠ΅Π½Π΄ΠΈΠΊΡΠ»ΡΡΠ½ΠΎΠΉ ΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠΉ Π°Π½ΠΈΠ·ΠΎΡΡΠΎΠΏΠΈΠΈ (ΠΠΠ) K β₯ ~ 10
ΡΡΠ³/ΡΠΌ
, ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ Π΄ΠΈΡΡΠ°ΠΊΡΠΈΠΈ ΠΈ ΠΏΡΠΎΡΠ²Π΅ΡΠΈΠ²Π°ΡΡΠ΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΠΌΠΈΠΊΡΠΎΡΠΊΠΎΠΏΠΈΠΈ, Π²ΠΊΠ»ΡΡΠ°Ρ ΠΌΠ΅ΡΠΎΠ΄ ΠΈΠ·Π³ΠΈΠ±Π½ΡΡ
ΠΊΠΎΠ½ΡΡΡΠΎΠ². ΠΡΠΎΡΠ΅ΡΡΡ Π²Π·ΡΡΠ²Π½ΠΎΠΉ ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΠΈ Π°ΠΌΠΎΡΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΎΡΠΌΠΈΡΡΡΡ ΡΠ°Π·Π»ΠΈΡΠ½ΡΠ΅ Π΄ΠΈΡΡΠΈΠΏΠ°ΡΠΈΠ²Π½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΈΠ· Π½Π°Π½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
Π·Π°ΡΠΎΠ΄ΡΡΠ΅ΠΉ. Π ΠΏΡΠ΅Π΄ΡΠ΄ΡΡΠΈΡ
ΡΠ°Π±ΠΎΡΠ°Ρ
[2, 3] Π±ΡΠ»ΠΎ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠΎΡΠ»Π΅ ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΠΈ (Π’ ΠΎΡΠΆΠΈΠ³Π° ~ 260-330 Β°C) Π°ΡΠΎΠΌΠ½Π°Ρ ΡΡΡΡΠΊΡΡΡΠ° Tb 30 Fe 70 , Co 80 C 20 , Fe 86 Mn 13 C ΠΈ Co 50 Pd 50 Π±ΡΠ»Π° ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π° ΠΊΠ°ΠΊ ΡΠ΅ΡΡΠ°ΡΠ΄ΡΠΈΡΠ΅ΡΠΊΠΈ ΠΏΠ»ΠΎΡΠ½ΠΎ ΡΠΏΠ°ΠΊΠΎΠ²Π°Π½Π½Π°Ρ ΡΡΡΡΠΊΡΡΡΠ° Π€ΡΠ°Π½ΠΊΠ° ΠΠ°ΡΠΏΠ΅ΡΠ°. Π ΡΡΠΈΡ
ΡΠ°Π±ΠΎΡΠ°Ρ
ΡΡΡΡΠΊΡΡΡΠ½ΡΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΠΎΠ½ΠΊΠΈΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ, ΡΠΎΠ·Π΄Π°Π½Π½ΡΠ΅ Π΄Π»Ρ ΠΌΠΈΠΊΡΠΎ-ΠΈ ΠΌΠ΅Π·ΠΎΠΌΠ°ΡΡΡΠ°Π±ΠΎΠ² ΡΠ²ΡΠ·ΡΠ²Π°ΡΡΡΡ Ρ ΠΌΠ°Π³Π½ΠΈΡΠ½ΡΠΌΠΈ ΠΈ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΠΌΠΈ ΡΠ²ΠΎΠΉΡΡΠ²Π°ΠΌΠΈ ΠΏΠ»Π΅Π½ΠΎΠΊ
ASSOCIATION OF GENETIC POLYMORPHISMS WITH COMPLICATIONS OF IMPLANTED LVAD DEVICES IN PATIENTS WITH CONGESTIVE HEART FAILURE: A KAZAKHSTANI STUDY
The left ventricular assist device (LVAD) is one of the alternative treatments for heart failure
(HF) patients. However, LVAD support is followed by thrombosis, and bleeding complications which
are caused by high non-physiologic shear stress and antithrombotic/anticoagulant therapy. A high
risk of complications occurs in the presence of the genotype polymorphisms which are involved in the
coagulation system, hemostasis function and in the metabolism of the therapy. The aim of the study
was to investigate the influence of single-nucleotide polymorphisms (SNP) in HF patients with LVAD
complications. We analyzed 21 SNPs in HF patients (n = 98) with/without complications, and healthy
controls (n = 95). SNPs rs9934438; rs9923231 in VKORC1, rs5918 in ITGB3 and rs2070959 in UGT1A6
demonstrated significant association with HF patientsβ complications (OR (95% CI): 3.96 (1.42β11.02),
p = 0.0057), (OR (95% CI): 3.55 (1.28β9.86), p = 0.011), (OR (95% CI): 5.37 (1.79β16.16), p = 0.0056)
and OR (95% CI): 4.40 (1.06β18.20), p = 0.044]. Genotype polymorphisms could help to predict
complications at pre- and post-LVAD implantation period, which will reduce mortality rate. Our
research showed that patients can receive treatment with warfarin and aspirin with a personalized
dosage and LVAD complications can be predicted by reference to their genotype polymorphisms in
VKORC1, ITGB3 and UGT1A6 genes
Role of Genetic Polymorphisms in the Development of Complications in Patients with Implanted Left Ventricular Assist Devices: HeartWare, HeartMate II, and HeartMate 3
Left ventricular assist device (LVAD) implantation is one of the mechanical circulatory support (MCS) treatments for advanced heart failure (HF) patients. MCS has emerged as a lifesaving therapy that improves patientsβ quality of life. However, MCS remains limited by a paradoxical coagulopathy accompanied by thrombosis and bleeding. The mechanisms of MCS thrombosis are increasingly being defined, but MCS-related bleeding, which is related to shear-mediated alteration of platelet function, remains poorly understood. Complications might develop due to the high non-physiological shear stress in the device and as a consequence of individual variability in response to the antithrombotic therapy. Thromboelastography (TEG) and genotyping of gene polymorphisms that are involved in the coagulation cascade and in the metabolism of the antithrombotic therapy might be valuable sources of information for the reduction of complication development. The aim of the study was to identify genetic factors related to the development of device complications according to the implanted LVAD type. We compared the clinical and genetic data of HF patients (n = 98) with/without complications with three types of implanted devices: HeartWare HVAD (HW), HeartMate II (HMII), and HeartMate 3 (HM3). rs9923231 in VKORC1 (95%CI β6.28β0.22, p = 0.04) and rs5918 in ITGB3 genes (95%CI 0.003β4.36, p = 0.05) showed significant association with the TEG coagulation index parameter, which identified hyper- and hypo-coagulation states. The wild genotype of rs5918 in the ITGB3 gene prevailed in patients implanted with HM3 devices, which developed fewer complications than with HMII (p = 0.04). Individual genetic information could be useful in the management of patients with HF and the implantation of MCS to reduce the development of complications.Journal of Clinical Medicine, 12(23), art. no. 7235; 202