Identifying new physics contributions in the Higgs sector at linear e+e- colliders

Loop driven decay modes of the Higgs are sensitive to new physics contributions because of new particles in the loops. To highlight this we look at the dilepton-dijet signal in the dominant Higgs production channel at a linear e+e- collider. We show that by taking a simple ratio between cross-sections of two different final states such contributions can be very easily identified.Comment: Latex 4 pages, 2 eps figures (style files included). Talk given at the linear collider workshop LCWS06, Bangalore, March 200

Silicon dendritic web material

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined

Hidden Extra U(1) at the Electroweak/TeV Scale

We propose a simple extension of the Standard Model (SM) by adding an extra U(1) symmetry which is hidden from the SM sector. Such a hidden U(1) has not been considered before, and its existence at the TeV scale can be explored at the LHC. This hidden U(1) does not couple directly to the SM particles, and couples only to new SU(2)_L singlet exotic quarks and singlet Higgs bosons, and is broken at the TeV scale. The dominant signals at the high energy hadron colliders are multi lepton and multi b-jet final states with or without missing energy. We calculate the signal rates as well as the corresponding Standard Model background for these final states. A very distinctive signal is 6 high p_T b-jets in the final state with no missing energy. For a wide range of the exotic quarks masses the signals are observable above the background at the LHC.Comment: 19 pages, 5 figure

Identifying the contributions of Universal Extra Dimensions in the Higgs sector at linear e+ e- colliders

We study the dilepton-dijet signal in the dominant Higgs production channel at a linear e+ e- collider. We estimate the effects of Universal Extra Dimension (UED) by a simple analysis of the cross-sections. The heavy Kaluza-Klein excitations of the Standard Model fields in UED can significantly alter the decay properties of the Higgs boson to loop-driven final states. We show that by taking a simple ratio between cross-sections of two different final states this difference can be very easily highlighted.Comment: Some parts of the text modified. 1 figure added. Version to appear in IJMP

Temporally and spatially resolved flow in a two-stage axial compressor. Part 2: Computational assessment

Fluid dynamics of turbomachines are complicated due to aerodynamic interactions between rotors and stators. It is necessary to understand the aerodynamics associated with these interactions in order to design turbomachines that are both light and compact as well as reliable and efficient. The current study uses an unsteady, thin-layer Navier-Stokes zonal approach to investigate the unsteady aerodynamics of a multi-stage compressor. Relative motion between rotors and stators is made possible by use of systems of patched and overlaid grids. Results have been computed for a 2 1/2-stage compressor configuration. The numerical data compares well with experimental data for surface pressures and wake data. In addition, the effect of grid refinement on the solution is studied

Single Production of Doubly Charged Higgsinos at linear e-e- colliders

Several extended supersymmetric models, motivated by either grand unification, or by neutrino mass generation, predict light doubly charged higgsinos. We study the production of a single doubly charged higgsino and its decay channels at the International Linear Collider (ILC) operating in the e-e- mode. We analyze the production cross section for e-e- --> tilde{Delta}^{--}_{L,R} chi^0_1 as a function of different kinematic variables, followed by the decay, through several channels, of the doubly charged higgsino into a final state of two leptons plus missing energy. We include the standard model background and discuss how kinematic cuts could be used effectively to limit this background. Single production of these exotics could provide a spectacular signal for a new underlying symmetry and for physics beyond the minimal supersymmetric standard model.Comment: Typos corrected, Journal Versio

Development of high efficiency solar cells on silicon web

Web base material is being improved with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). Carrier loss mechanisms in web silicon was investigated, techniques were developed to reduce carrier recombination in the web, and web cells were fabricated using effective surface passivation. The effect of stress on web cell performance was also investigated

Top-Gated Chemical Vapor Deposited Mos2 Field-Effect Transistors On Si3N4 Substrates

We report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field-effect transistors (FETs) on silicon nitride (Si3N4) substrates. We show that Si3N4 substrates offer comparable electrical performance to thermally grown SiO2 substrates for MoS2 FETs, offering an attractive passivating substrate for transition-metal dichalcogenides (TMD) with a smooth surface morphology. Single-crystal MoS2 grains are grown via vapor transport process using solid precursors directly on low pressure CVD Si3N4, eliminating the need for transfer processes which degrade electrical performance. Monolayer top-gated MoS2 FETs with Al2O3 gate dielectric on Si3N4 achieve a room temperature mobility of 24 cm(2)/V s with I-on/I-off current ratios exceeding 10(7). Using HfO2 as a gate dielectric, monolayer top-gated CVD MoS2 FETs on Si3N4 achieve current densities of 55 mu A/mu m and a transconductance of 6.12 mu S/mu m at V-tg of -5V and V-ds of 2V. We observe an increase in mobility at lower temperatures, indicating phonon scattering may dominate over charged impurity scattering in our devices. Our results show that Si3N4 is an attractive alternative to thermally grown SiO2 substrate for TMD FETs. (C) 2015 AIP Publishing LLC.STTR programNSF NASCENT ERCArmy Research Office under STTR W911NF-14-P-0030Microelectronics Research Cente