Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)

We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition

Electric field enhancement with plasmonic colloidal nanoantennas excited by a silicon nitride waveguide

We investigate the feasibility of CMOS-compatible optical structures to develop novel integrated spectroscopy systems. We show that local field enhancement is achievable utilizing dimers of plasmonic nanospheres that can be assembled from colloidal solutions on top of a CMOS-compatible optical waveguide. The resonant dimer nanoantennas are excited by modes guided in the integrated silicon nitride waveguide. Simulations show that 100 fold electric field enhancement builds up in the dimer gap as compared to the waveguide evanescent field amplitude at the same location. We investigate how the field enhancement depends on dimer location, orientation, distance and excited waveguide modes

Kinetics governing phase separation of nanostructured Sn_xGe_(1–x) alloys

We have studied the dynamic phenomenon of Sn_xGe_(1–x)/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates. Phase separation leads to the formation of direct band gap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed Si_yGe_(1–y)/Ge(001) virtual substrates. The experimental results are compared with three linear instability models of strained film growth and find good agreement with only one of the models for phase separation during dynamic growth

Two-scale structure for giant field enhancement: combination of Rayleigh anomaly and colloidal plasmonic resonance

We demonstrate theoretically and experimentally a two-scale architecture able to achieve giant field enhancement by simultaneously exploiting both the Rayleigh anomaly and localized surface plasmon resonance. Metallic oligomers composed of colloidal nanospheres are well-known for the ability to strongly enhance the near-field at their plasmonic resonance. However, due to intrinsic nonlocality of the dielectric response of the metals along with their inherent loss, the achievable field enhancement has an ultimate constraint. In this paper we demonstrate that combining plasmonic resonance enhancements from oligomers, with feature size of tens of nanometers, with a Rayleigh anomaly caused by a 1-D set of periodic nanorods, having a period on the order of the excitation wavelength, provides a mean to produce enhancement beyond that constrained by losses in near field resonances. Metallic oligomers are chemically assembled in between the periodic set of nanorods that are fabricated using lithographic methods. The nanorod periodicity is investigated to induce the Rayleigh anomaly at the oligomers plasmonic resonance wavelength to further enhance the field in the oligomers hot spots. A thorough study of this structure is carried out by using an effective analytical-numerical model which is also compared to full-wave simulation results. Experimental results comparing enhancements in surface enhanced Raman scattering measurements with and without nanorods demonstrate the effectiveness of a Rayleigh anomaly in boosting the field enhancement. The proposed structure is expected to be beneficial for many applications ranging from medical diagnostics to sensors and solar cells

Structural Transformations in self-assembled Semiconductor Quantum Dots as inferred by Transmission Electron Microscopy

Transmission electron microscopy studies in both the scanning and parallel illumination mode on samples of two generic types of self-assembled semiconductor quantum dots are reported. III-V and II-VI quantum dots as grown in the Stranski-Krastanow mode are typically alloyed and compressively strained to a few %, possess a more or less random distribution of the cations and/or anions over their respective sublattices, and have a spatially non-uniform chemical composition distribution. Sn quantum dots in Si as grown by temperature and growth rate modulated molecular beam epitaxy by means of two mechanisms possess the diamond structure and are compressively strained to the order of magnitude 10 %. These lattice mismatch strains are believed to trigger atomic rearrangements inside quantum dots of both generic types when they are stored at room temperature over time periods of a few years. The atomic rearrangements seem to result in long-range atomic order, phase separation, or phase transformations. While the results suggest that some semiconductor quantum dots may be structurally unstable and that devices based on them may fail over time, triggering and controlling structural transformations in self-assembled semiconductor quantum dots may also offer an opportunity of creating atomic arrangements that nature does not otherwise provide

Structural Transformations in self-assembled Semiconductor Quantum Dots as inferred by Transmission Electron Microscopy

Transmission electron microscopy studies in both the scanning and parallel illumination mode on samples of two generic types of self-assembled semiconductor quantum dots are reported. III-V and II-VI quantum dots as grown in the Stranski-Krastanow mode are typically alloyed and compressively strained to a few %, possess a more or less random distribution of the cations and/or anions over their respective sublattices, and have a spatially non-uniform chemical composition distribution. Sn quantum dots in Si as grown by temperature and growth rate modulated molecular beam epitaxy by means of two mechanisms possess the diamond structure and are compressively strained to the order of magnitude 10 %. These lattice mismatch strains are believed to trigger atomic rearrangements inside quantum dots of both generic types when they are stored at room temperature over time periods of a few years. The atomic rearrangements seem to result in long-range atomic order, phase separation, or phase transformations. While the results suggest that some semiconductor quantum dots may be structurally unstable and that devices based on them may fail over time, triggering and controlling structural transformations in self-assembled semiconductor quantum dots may also offer an opportunity of creating atomic arrangements that nature does not otherwise provide

Directing Cluster Formation of Au Nanoparticles from Colloidal Solution

Discrete clusters of closely spaced Au nanoparticles can be utilized in devices from photovoltaics to molecular sensors because of the formation of strong local electromagnetic field enhancements when illuminated near their plasmon resonance. In this study, scalable, chemical self-organization methods are shown to produce Au nanoparticle clusters with uniform nanometer interparticle spacing. The performance of two different methods, namely electrophoresis and diffusion, for driving the attachment of Au nanoparticles using a chemical cross-linker on chemically patterned domains of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) thin films are evaluated. Significantly, electrophoresis is found to produce similar surface coverage as diffusion in 1/6th of the processing time with an ~2-fold increase in the number of Au nanoparticles forming clusters. Furthermore, average interparticle spacing within Au nanoparticle clusters was found to decrease from 2-7 nm for diffusion deposition to approximately 1-2 nm for electrophoresis deposition, and the latter method exhibited better uniformity with most clusters appearing to have about 1 nm spacing between nanoparticles. The advantage of such fabrication capability is supported by calculations of local electric field enhancements using electromagnetic full-wave simulations from which we can estimate surface-enhanced Raman scattering (SERS) enhancements. In particular, full-wave results show that the maximum SERS enhancement, as estimated here as the fourth power of the local electric field, increases by a factor of 100 when the gap goes from 2 to 1 nm, reaching values as large as 10(10), strengthening the usage of electrophoresis versus diffusion for the development of molecular sensors