49 research outputs found

    High sensitivity resonance frequency measurements of individualmicro-cantilevers using fiber optical interferometry

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    We describe a setup for the resonance frequency measurement of individual microcantilevers. The setup displays both high spatial selectivity and sensitivity to specimen vibrations by utilizing a tapered uncoated fiber tip. The high sensitivity to specimen vibrations is achieved by the combination of optical Fabry-Perot interferometry and narrow band RF detection. Wave fronts reflected on the specimen and on the fiber tip end face interfere, thus no reference plane on the specimen is needed, as demonstrated with the example of freestanding silicon nitride micro-cantilevers. The resulting system is integrated in a DB-235 dual beam FIB system, thereby allowing the measurement of micro-cantilever responses during observation in SEM mode. The FIB was used to modify the optical fiber tip. At this point of our RF system development, the microcantilevers used to characterize the detector were not modified in situ

    Effects of surface ligands on the charge memory characteristics of CdSe/ZnS nanocrystals in TiO2 thin film

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    harge memory characteristics have been systematically studied based on colloidal CdSe/ZnS nanocrystal quantum dots (QDs) embedded in similar to 50 nm-thick TiO2 film. Ligand-capped QDs showed negligible electron charging effect, implying that the electron affinity of QDs was significantly decreased by surface dipole layer surrounding QDs. In contrast, the hole charging was affected by the carrier injection blocking effect of the surface ligands. Efficient electron and hole charging characteristics were realized by removing the surface ligands via H-2 plasma treatment.open4

    A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

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    Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.Comment: 16 pages, 9 figures, submitted to Nucl. Instr and Meth

    Creep-resistant composites of alumina and single-wall carbon nanotubes

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    Composites of alumina Al2O3 ceramic and single-wall carbon nanotubes (SWNTs) have been tested in uniaxial compression at 1300 and 1350 °C (Ar atmosphere), and they have been found to be about two orders of magnitude more creep-resistant compared to a pure alumina of about the same grain size (0.5 micras). This is attributed to partial blocking of grain-boundary sliding by SWNTs in the composites. Since the grain boundaries in the ceramic/SWNTs composites are amenable to being engineered, this constitutes an attractive approach to the design of creep-resistant ceramic composites
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