Conductivity dependence on the thickness of hydrogenated, amorphous silicon-carbon films

We report experimental results on the dependence of conductivity on thickness in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbon thin film alloys. The analysis of multilayer structures indicates that band bending at the vacuum-him interface accounts for most of the conductivity changes. The film-substrate interface seems to play a minor role in the conductivity experiments. The behavior of the sub-gap absorption coefficient of thin films shows that the material near the interfaces and in the bulk has the same defect density. (C) 1997 Elsevier Science S.A.2954167128729

Effects of Irradiation on Porous Silicon

Besides the well-known effect of photoluminescence, the impinging of photons and other kinds of particles such as electrons, ions, and muons on porous silicon produces important effects. Some of these effects can modify the structure and properties of the material, distorting the interpretation of data based on the use of irradiation. Some of the irradiation effects are useful in different applications such as photodynamic therapy or display applications. This work is a review of the effects of irradiation on porous silicon.Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentin