9 research outputs found
Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
The ability to detect light over a broad spectral range is central for
practical optoelectronic applications, and has been successfully demonstrated
with photodetectors of two-dimensional layered crystals such as graphene and
MoS2. However, polarization sensitivity within such a photodetector remains
elusive. Here we demonstrate a linear-dichroic broadband photodetector with
layered black phosphorus transistors, using the strong intrinsic linear
dichroism arising from the in-plane optical anisotropy with respect to the
atom-buckled direction, which is polarization sensitive over a broad bandwidth
from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field
induced by gating in black phosphorus transistors can spatially separate the
photo-generated electrons and holes in the channel, effectively reducing their
recombination rate, and thus enhancing the efficiency and performance for
linear dichroism photodetection. This provides new functionality using
anisotropic layered black phosphorus, thereby enabling novel optical and
optoelectronic device applications.Comment: 18 pages, 5 figures in Nature Nanotechnology 201
Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing
Versatile stochastic dot product circuits based on nonvolatile memories for high performance neurocomputing and neurooptimization
Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
Atomically thin noble metal dichalcogenide: A broadband mid-infrared semiconductor
The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices