Sub-microsecond correlations in photoluminescence from InAs quantum dots

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.Comment: 8 pages, 8 figure

Quantum dots coordinated with conjugated organic ligands: new nanomaterials with novel photophysics

CdSe quantum dots functionalized with oligo-(phenylene vinylene) (OPV) ligands (CdSe-OPV nanostructures) represent a new class of composite nanomaterials with significantly modified photophysics relative to bulk blends or isolated components. Single-molecule spectroscopy on these species have revealed novel photophysics such as enhanced energy transfer, spectral stability, and strongly modified excited state lifetimes and blinking statistics. Here, we review the role of ligands in quantum dot applications and summarize some of our recent efforts probing energy and charge transfer in hybrid CdSe-OPV composite nanostructures