Hybrid gap plasmon GaAs nanolasers

Compact semiconductor lasers with sub-wavelength-scale dimensions rely heavily on materials with low surface recombination due to the large surface area to volume ratios of their nano-cavities. Furthermore, the reliance on semiconductor nanostructures has led to predominantly bottom-up fabrication approaches, which has hindered scalable and practical applications. In this letter, we present lithographically constructed hybrid gap plasmon nanolasers using the gain of bulk GaAs operating at room temperature. The nanolasers are built on GaAs suspended membranes with InGaP passivation layers. Laser resonators are defined only by patterning gold on top of these GaAs membranes, thus eliminating the need to etch the semiconductor for optical confinement, which would intro duce additional surface recombination. An analysis of the modal gain and losses in these devices suggests that threshold carrier densities in the range of 4-5×1018 cm -3 are necessary - potentially achievable with current densities as low as 6-8 kA cm-2

Engineering the Photonic Density of States with metamaterials

The photonic density of states (PDOS), like its' electronic coun- terpart, is one of the key physical quantities governing a variety of phenom- ena and hence PDOS manipulation is the route to new photonic devices. The PDOS is conventionally altered by exploiting the resonance within a device such as a microcavity or a bandgap structure like a photonic crystal. Here we show that nanostructured metamaterials with hyperbolic dispersion can dramatically enhance the photonic density of states paving the way for metamaterial based PDOS engineering

Multiresonant broadband optical antennas as efficient tunable nanosources of second harmonic light

10.1021/nl302665mNano Letters1294997-5002NALE

Mechanical tuning of LaAlO<inf>3</inf>/SrTiO<inf>3</inf> interface conductivity

10.1021/acs.nanolett.5b01021Nano Letters1553547-355