125 research outputs found
Simple Pulses for Universal Quantum Computation with a Heisenberg ABAB Chain
Recently Levy has shown that quantum computation can be performed using an
ABAB.. chain of spin-1/2 systems with nearest-neighbor Heisenberg interactions.
Levy notes that all necessary elementary computational `gates' can be achieved
by using spin-resonance techniques involving modulating the spin-spin
interaction strength at high frequency. Here we note that, as an alternative to
that approach, it is possible to perform the elementary gates with simple,
non-oscillatory pulses.Comment: 3 pages including 2 fig
Surface recombination measurements on IIIâV candidate materials for nanostructure light-emitting diodes
Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes
Effect of exchange interaction on fidelity of quantum state transfer from a photon qubit to an electron-spin qubit
We analyzed the fidelity of the quantum state transfer (QST) from a
photon-polarization qubit to an electron-spin-polarization qubit in a
semiconductor quantum dot, with special attention to the exchange interaction
between the electron and the simultaneously created hole. In order to realize a
high-fidelity QST we had to separate the electron and hole as soon as possible,
since the electron-hole exchange interaction modifies the orientation of the
electron spin. Thus, we propose a double-dot structure to separate the electron
and hole quickly, and show that the fidelity of the QST can reach as high as
0.996 if the resonant tunneling condition is satisfied.Comment: 5 pages, 4 figures, to be published in Phys. Rev. B Rapid
Communication
Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
Motivated by applications to quantum computer architectures we study the
change in the exchange interaction between neighbouring phosphorus donor
electrons in silicon due to the application of voltage biases to surface
control electrodes. These voltage biases create electro-static fields within
the crystal substrate, perturbing the states of the donor electrons and thus
altering the strength of the exchange interaction between them. We find that
control gates of this kind can be used to either enhance, or reduce the
strength of the interaction, by an amount that depends both on the magnitude
and orientation of the donor separation.Comment: 5 Pages, 5 Figure
Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
We theoretically study the Hilbert space structure of two neighbouring P
donor electrons in silicon-based quantum computer architectures. To use
electron spins as qubits, a crucial condition is the isolation of the electron
spins from their environment, including the electronic orbital degrees of
freedom. We provide detailed electronic structure calculations of both the
single donor electron wave function and the two-electron pair wave function. We
adopted a molecular orbital method for the two-electron problem, forming a
basis with the calculated single donor electron orbitals. Our two-electron
basis contains many singlet and triplet orbital excited states, in addition to
the two simple ground state singlet and triplet orbitals usually used in the
Heitler-London approximation to describe the two-electron donor pair wave
function. We determined the excitation spectrum of the two-donor system, and
study its dependence on strain, lattice position and inter donor separation.
This allows us to determine how isolated the ground state singlet and triplet
orbitals are from the rest of the excited state Hilbert space. In addition to
calculating the energy spectrum, we are also able to evaluate the exchange
coupling between the two donor electrons, and the double occupancy probability
that both electrons will reside on the same P donor. These two quantities are
very important for logical operations in solid-state quantum computing devices,
as a large exchange coupling achieves faster gating times, whilst the magnitude
of the double occupancy probability can affect the error rate.Comment: 15 pages (2-column
Multi-Qubit Gates in Arrays Coupled by 'Always On' Interactions
Recently there has been interest in the idea of quantum computing without
control of the physical interactions between component qubits. This is highly
appealing since the 'switching' of such interactions is a principal difficulty
in creating real devices. It has been established that one can employ 'always
on' interactions in a one-dimensional Heisenberg chain, provided that one can
tune the Zeeman energies of the individual (pseudo-)spins. It is important to
generalize this scheme to higher dimensional networks, since a real device
would probably be of that kind. Such generalisations have been proposed, but
only at the severe cost that the efficiency of qubit storage must *fall*. Here
we propose the use of multi-qubit gates within such higher-dimensional arrays,
finding a novel three-qubit gate that can in fact increase the efficiency
beyond the linear model. Thus we are able to propose higher dimensional
networks that can constitute a better embodiment of the 'always on' concept - a
substantial step toward bringing this novel concept to full fruition.Comment: 20 pages in preprint format, inc. 3 figures. This version has fixed
typos and printer-friendly figures, and is to appear in NJ
Solid-State Quantum Computer Based on Scanning Tunneling Microscopy
We propose a solid-state nuclear spin quantum computer based on application
of scanning tunneling microscopy (STM) and well-developed silicon technology.
It requires the measurement of tunneling current modulation caused by the
Larmor precession of a single electron spin.
Our envisioned STM quantum computer would operate at the high magnetic field
(T) and at low temperature K.Comment: 3pages RevTex including 2 figure
Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure
The electron spin resonance (ESR) of two-dimensional electrons is
investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR
resonance frequency can be turned by means of a gate voltage. The front and
back gates of the heterostructure produce opposite g-factor shift, suggesting
that electron g-factor is being electrostatically controlled by shifting the
equilibrium position of the electron wave function from one epitaxial layer to
another with different g-factors
Counterintuitive transitions between crossing energy levels
We calculate analytically the probabilities for intuitive and
counterintuitive transitions in a three-state system, in which two parallel
energies are crossed by a third, tilted energy. The state with the tilted
energy is coupled to the other two states in a chainwise linkage pattern with
constant couplings of finite duration. The probability for a counterintuitive
transition is found to increase with the square of the coupling and decrease
with the squares of the interaction duration, the energy splitting between the
parallel energies, and the tilt (chirp) rate. Physical examples of this model
can be found in coherent atomic excitation and optical shielding in cold atomic
collisions
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