Nanowire Acting as a Superconducting Quantum Interference Device

We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the operation of a superconducting quantum interference device.Comment: 4 pages, 4 figures, 1 tabl

Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films

Nanotube Piezoelectricity

We combine ab initio, tight-binding methods and analytical theory to study piezoelectric effect of boron nitride nanotubes. We find that piezoelectricity of a heteropolar nanotube depends on its chirality and diameter and can be understood starting from the piezoelectric response of an isolated planar sheet, along with a structure specific mapping from the sheet onto the tube surface. We demonstrate that coupling between the uniaxial and shear deformation are only allowed in the nanotubes with lower chiral symmetry. Our study shows that piezoelectricity of nanotubes is fundamentally different from its counterpart in three dimensional (3D) bulk materials.Comment: 4 pages, with 3 postscript figures embedded. Uses REVTEX4 macros. Also available at http://www.physics.upenn.edu/~nsai/preprints/bn_piezo/index.htm

Dynamics of Bulk vs. Nanoscale WS_2: Local Strain and Charging Effects

We measured the infrared vibrational properties of bulk and nanoparticle WS$_2$ in order to investigate the structure-property relations in these novel materials. In addition to the symmetry-breaking effects of local strain, nanoparticle curvature modifies the local charging environment of the bulk material. Performing a charge analysis on the \emph{xy}-polarized E$_{1u}$ vibrational mode, we find an approximate 1.5:1 intralayer charge difference between the layered 2H material and inorganic fullerene-like (IF) nanoparticles. This effective charge difference may impact the solid-state lubrication properties of nanoscale metal dichalcogenides.Comment: 6 pages, 5 figure

A low-dimensional spin S = 1/2 system at the quantum critical limit: Na2V2O7

We report the results of measurements of the dc-susceptibility and the 23Na-NMR response of Na2V2O7, a recently synthesized, non metallic low dimensional spin system. Our results indicate that upon reducing the temperature to below 100 K, the V^{4+} moments are gradually quenched, leaving only one moment out of 9 active. The NMR data reveal a phase transition at very low temperatures. With decreasing applied field H, the critical temperature shifts towards T = 0 K, suggesting that Na2V2O7 may be regarded as an insulator reaching a quantum critical point at H = 0.Comment: 4 pages, 5 figure

A Raman study of the Charge-Density-Wave State in A0.3_{0.3}MoO3_3 (A = K,Rb)

We report a comparative Raman spectroscopic study of the quasi-one-dimensional charge-density-wave systems \ab (A = K, Rb). The temperature and polarization dependent experiments reveal charge-coupled vibrational Raman features. The strongly temperature-dependent collective amplitudon mode in both materials differ by about 3 cm, thus revealing the role of alkali atom. We discus the observed vibrational features in terms of charge-density-wave ground state accompanied by change in the crystal symmetry. A frequency-kink in some modes seen in \bb between T = 80 K and 100 K supports the first-order lock-in transition, unlike \rb. The unusually sharp Raman lines(limited by the instrumental response) at very low temperatures and their temperature evolution suggests that the decay of the low energy phonons is strongly influenced by the presence of the temperature dependent charge density wave gap.Comment: 13 pages, 7 figure

Ferroelectric Phase Transitions in Three-Component Short-Period Superlattices Studied by Ultraviolet Raman Spectroscopy

Vibrational spectra of three-component BaTiO3SrTiO3CaTiO3 short-period superlattices grown by pulsed laser deposition with atomic-layer control have been investigated by ultraviolet Raman spectroscopy. Monitoring the intensity of the first-order phonon peaks in Raman spectra as a function of temperature allowed determination of the ferroelectric phase transition temperature, Tc. Raman spectra indicate that all superlattices remain in the tetragonal ferroelectric phase with out-of-plane polarization in the entire temperature range below Tc. The dependence of Tc on the relative thicknesses of ferroelectric (BaTiO3) to non-ferroelectric materials (SrTiO3 and CaTiO3) has been studied. The highest Tc was found in superlattices having the largest relative amount of BaTiO3, provided that the superlattice maintains its coherency with the substrate. Strain relaxation leads to a significant decrease in the ferroelectric phase transition temperature

Tubular structures of GaS

In this Brief Report we demonstrate, using density-functional tight-binding theory, that gallium sulfide (GaS) tubular nanostructures are stable and energetically viable. The GaS-based nanotubes have a semiconducting direct gap which grows towards the value of two-dimensional hexagonal GaS sheet and is in contrast to carbon nanotubes largely independent of chirality. We further report on the mechanical properties of the GaS-based nanotubes

Phase behavior and material properties of hollow nanoparticles

Effective pair potentials for hollow nanoparticles like the ones made from carbon (fullerenes) or metal dichalcogenides (inorganic fullerenes) consist of a hard core repulsion and a deep, but short-ranged, van der Waals attraction. We investigate them for single- and multi-walled nanoparticles and show that in both cases, in the limit of large radii the interaction range scales inversely with the radius, $R$, while the well depth scales linearly with $R$. We predict the values of the radius $R$ and the wall thickness $h$ at which the gas-liquid coexistence disappears from the phase diagram. We also discuss unusual material properties of the solid, which include a large heat of sublimation and a small surface energy.Comment: Revtex, 13 pages with 8 Postscript files included, submitted to Phys. Rev.