New negative differential resistance device based on resonant interband tunneling

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

Large NcN_c Universality of The Baryon Isgur--Wise Form Factor: The Group Theoretical Approach

In a previous article, it has been proved under the framework of chiral soliton model that the same Isgur--Wise form factor describes the semileptonic $\Lambda_b\to\Lambda_c$ and $\Sigma^{(*)}_b\to\Sigma^{(*)}_c$ decays in the large $N_c$ limit. It is shown here that this result is in fact independent of the chiral soliton model and is solely the consequence of the spin-flavor SU(4) symmetry which arises in the baryon sector in the large $N_c$ limit.Comment: 10 pages in REVTeX, no figure

Nuclear reactor power as applied to a space-based radar mission

The SP-100 Project was established to develop and demonstrate feasibility of a space reactor power system (SRPS) at power levels of 10's of kilowatts to a megawatt. To help determine systems requirements for the SRPS, a mission and spacecraft were examined which utilize this power system for a space-based radar to observe moving objects. Aspects of the mission and spacecraft bearing on the power system were the primary objectives of this study; performance of the radar itself was not within the scope. The study was carried out by the Systems Design Audit Team of the SP-100 Project

Comparison of antiemetic efficacy of granisetron and ondansetron in Oriental patients: a randomized crossover study.

A double-blind randomized crossover trial was performed to compare the antiemetic efficacy of two 5-HT3 receptor antagonists, granisetron and ondansetron, in Chinese patients receiving adjuvant chemotherapy (cyclophosphamide, methotrexate and 5-fluorouracil) for breast cancer. Twenty patients were randomized to receive chemotherapy with either granisetron on day 1 and ondansetron on day 8 of the first cycle followed by the reverse order in the second cycle, or vice versa. The number of vomiting episodes and the severity of nausea in the first 24 h (acute vomiting/nausea) and the following 7 days (delayed vomiting/nausea) were studied. Acute vomiting was completely prevented in 29 (72.5%) cycles with granisetron and 27 (67.5%) cycles with ondansetron, and treatment failure (>5 vomiting episodes) occurred in two (5%) cycles with each agent (P = NS). Acute nausea was completely controlled in 15 (37.5%) cycles with granisetron and 14 (35%) cycles with ondansetron, whereas severe acute nausea occurred in four (10%) cycles with each agent (P = NS). However, complete response for delayed vomiting was observed in only 21 (52.5%) cycles with granisetron and 22 (55%) cycles with ondansetron (P = NS), and delayed nausea was completely controlled in only 11 (27.5%) and ten (25%) cycles respectively (P = NS). In conclusion, both granisetron and ondansetron are effective in controlling acute nausea and vomiting in Chinese patients, with equivalent antiemetic efficacy. Control of delayed nausea and vomiting is less satisfactory

Type II superlattices for infrared detectors and devices

Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds. Specifically, it has been demonstrated that both InSb/InAsxSb1-x superlattices and Ga1-xInxSb/InAs superlattices can possess energy gaps in the 8-14 mu m range. The efforts have focused on the Ga1-xInxSb/InAs system because of its extreme broken gap band alignment, which results in narrow energy gaps for very short superlattice periods. The authors report the use of in situ chemical doping of Ga1-xInxSb/InAs superlattices to fabricate p-n photodiodes. These diodes display a clear photovoltaic response with a threshold near 12 mu m. They have also attained outstanding structural quality in Ga1-xInxSb/InAs superlattices grown on radiatively heated GaSb substrates. Cross-sectional transmission electron microscope images of these superlattices display no dislocations, while high resolution X-ray diffraction scans reveal sharp high-order superlattice satellites and strong Pendellosung fringes

Experimental observation of negative differential resistance from an InAs/GaSb interface

We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×10^4 A/cm^2 and 4.2×10^4 A/cm^2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively