56 research outputs found
Predicting polarization enhancement in multicomponent ferroelectric superlattices
Ab initio calculations are utilized as an input to develop a simple model of
polarization in epitaxial short-period CaTiO3/SrTiO3/BaTiO3 superlattices grown
on a SrTiO3 substrate. The model is then combined with a genetic algorithm
technique to optimize the arrangement of individual CaTiO3, SrTiO3 and BaTiO3
layers in a superlattice, predicting structures with the highest possible
polarization and a low in-plane lattice constant mismatch with the substrate.
This modelling procedure can be applied to a wide range of layered
perovskite-oxide nanostructures providing guidance for experimental development
of nanoelectromechanical devices with substantially improved polar properties.Comment: 4 pages, submitted to PR
Numerical study of anharmonic vibrational decay in amorphous and paracrystalline silicon
The anharmonic decay rates of atomic vibrations in amorphous silicon (a-Si)
and paracrystalline silicon (p-Si), containing small crystalline grains
embedded in a disordered matrix, are calculated using realistic structural
models. The models are 1000-atom four-coordinated networks relaxed to a local
minimum of the Stillinger-Weber interatomic potential. The vibrational decay
rates are calculated numerically by perturbation theory, taking into account
cubic anharmonicity as the perturbation. The vibrational lifetimes for a-Si are
found to be on picosecond time scales, in agreement with the previous
perturbative and classical molecular dynamics calculations on a 216-atom model.
The calculated decay rates for p-Si are similar to those of a-Si. No modes in
p-Si reside entirely on the crystalline cluster, decoupled from the amorphous
matrix. The localized modes with the largest (up to 59%) weight on the cluster
decay primarily to two diffusons. The numerical results are discussed in
relation to a recent suggestion by van der Voort et al. [Phys. Rev. B {\bf 62},
8072 (2000)] that long vibrational relaxation inferred experimentally may be
due to possible crystalline nanostructures in some types of a-Si.Comment: 9 two-column pages, 13 figure
Towards device-size atomistic models of amorphous silicon
The atomic structure of amorphous materials is believed to be well described
by the continuous random network model. We present an algorithm for the
generation of large, high-quality continuous random networks. The algorithm is
a variation of the "sillium" approach introduced by Wooten, Winer, and Weaire.
By employing local relaxation techniques, local atomic rearrangements can be
tried that scale almost independently of system size. This scaling property of
the algorithm paves the way for the generation of realistic device-size atomic
networks.Comment: 7 pages, 3 figure
Materials with Colossal Dielectric Constant: Do They Exist?
Experimental evidence is provided that colossal dielectric constants, epsilon
>= 1000, sometimes reported to exist in a broad temperature range, can often be
explained by Maxwell-Wagner type contributions of depletion layers at the
interface between sample and contacts, or at grain boundaries. We demonstrate
this on a variety of different materials. We speculate that the largest
intrinsic dielectric constant observed so far in non-ferroelectric materials is
of order 100.Comment: 3 figure
Structure and physical properties of paracrystalline atomistic models of amorphous silicon
We have examined the structure and physical properties of paracrystalline molecular dynamics
models of amorphous silicon. Simulations from these models show qualitative agreement with the
results of recent mesoscale fluctuation electron microscopy experiments on amorphous silicon and
germanium. Such agreement is not found in simulations from continuous random network models.
The paracrystalline models consist of topologically crystalline grains which are strongly strained and a disordered matrix between them. We present extensive structural and topological characterization of the medium range order present in the paracrystalline models and examine their physical properties, such as the vibrational density of states, Raman spectra, and electron density of states. We show by direct simulation that the ratio of the transverse acoustic mode to transverse optical mode intensities ITA /ITO in the vibrational density of states and the Raman spectrum can provide a measure of medium range order. In general, we conclude that the current paracrystalline
models are a good qualitative representation of the paracrystalline structures observed in the
experiment and thus provide guidelines toward understanding structure and properties of
medium-range-ordered structures of amorphous semiconductors as well as other amorphous
materials
Thermodynamic Behavior of a Model Covalent Material Described by the Environment-Dependent Interatomic Potential
Using molecular dynamics simulations we study the thermodynamic behavior of a
single-component covalent material described by the recently proposed
Environment-Dependent Interatomic Potential (EDIP). The parameterization of
EDIP for silicon exhibits a range of unusual properties typically found in more
complex materials, such as the existence of two structurally distinct
disordered phases, a density decrease upon melting of the low-temperature
amorphous phase, and negative thermal expansion coefficients for both the
crystal (at high temperatures) and the amorphous phase (at all temperatures).
Structural differences between the two disordered phases also lead to a
first-order transition between them, which suggests the existence of a second
critical point, as is believed to exist for amorphous forms of frozen water.
For EDIP-Si, however, the unusual behavior is associated not only with the open
nature of tetrahedral bonding but also with a competition between four-fold
(covalent) and five-fold (metallic) coordination. The unusual behavior of the
model and its unique ability to simulation the liquid/amorphous transition on
molecular-dynamics time scales make it a suitable prototype for fundamental
studies of anomalous thermodynamics in disordeered systems.Comment: 48 pages (double-spaced), 13 figure
Phase-Shift keyed wideband signal against noises detection by quadrature receiver with input band-pass filter
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