Low energy proton radiation damage to (AlGa)As-GaAs solar cells

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation

Electron Radiation Damage of (alga) As-gaas Solar Cells

Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described

Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated

GaAs solar cells for concentrator systems in space

Cells for operation in space up to more than 100 suns were made, and an AMO efficiency of 21% at 100 suns with these cells was obtained. The increased efficiency resulted not only from the higher open circuit voltage associated with the higher light intensity (higher short circuit current); it also benefitted from the increase in fill factor caused by the lower relative contribution of the generation recombination current to the forward bias current when the cell's operating current density is increased. The experimental cells exhibited an AMO efficiency close to 16% at 200 C. The prospect of exploiting this capability for the continuous annealing of radiation damage or for high temperature missions (e.g., near Sun missions) remains therefore open. Space systems with concentration ratios on the order of 100 suns are presently under development. The tradeoff between increased concentration ratio and increased loss due to the cell's series resistance remains attractive even for space applications at a solar concentrator ratio of 100 suns. In the design of contact configuration with low enough series resistance for such solar concentration ratios, the shallow junction depth needed for good radiation hardness and the thin AlGaAs layer thickness needed to avoid excessive optical absorption losses have to be retained

Fabrication of high efficiency and radiation resistant GaAs solar cells

Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons

High energy proton radiation damage to (AlGa)As-G aAs solar cells

Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested

Monopole clusters, center vortices, and confinement in a Z(2) gauge-Higgs system

We propose to use the different kinds of vacua of the gauge theories coupled to matter as a laboratory to test confinement ideas of pure Yang-Mills theories. In particular, the very poor overlap of the Wilson loop with the broken string states supports the 't Hooft and Mandelstam confinement criteria. However in the Z(2) gauge-Higgs model we use as a guide we find that the condensation of monopoles and center vortices is a necessary, but not sufficient condition for confinement.Comment: 13 pages, 6 figures, minor changes, version to be published on Phys. Rev.

Zero temperature string breaking in lattice quantum chromodynamics

The separation of a heavy quark and antiquark pair leads to the formation of a tube of flux, or "string", which should break in the presence of light quark-antiquark pairs. This expected zero-temperature phenomenon has proven elusive in simulations of lattice QCD. We study mixing between the string state and the two-meson decay channel in QCD with two flavors of dynamical sea quarks. We confirm that mixing is weak and find that it decreases at level crossing. While our study does not show direct effects of internal quark loops, our results, combined with unitarity, give clear confirmation of string breaking.Comment: 20 pages, 7 figures. With small clarifications and two additions to references. Submitted to Phys. Rev.

Light scalars in strongly-coupled extra-dimensional theories

The low-energy dynamics of five-dimensional Yang-Mills theories compactified on S^1 can be described by a four-dimensional gauge theory coupled to a scalar field in the adjoint representation of the gauge group. Perturbative calculations suggest that the mass of this elementary scalar field is protected against power divergences, and is controlled by the size of the extra dimension R. As a first step in the study of this phenomenon beyond perturbation theory, we investigate the phase diagram of a SU(2) Yang-Mills theory in five dimensions regularized on anisotropic lattices and we determine the ratios of the relevant physical scales. The lattice system shows a dimensionally reduced phase where the four-dimensional correlation length is much larger than the size of the extra dimension, but still smaller than the four-dimensional volume. In this region of the bare parameter space, at energies below 1/R, the non-perturbative spectrum contains a \emph{light} scalar state. This state has a mass that is independent of the cut-off, and a small overlap with glueball operators. Our results suggest that light scalar fields can be introduced in a lattice theory using compactified extra dimensions, rather than fine tuning the bare mass parameter.Comment: 38 pages (7 pages of Appendix), 10 tables, 21 figures. Minor corrections. Version accepted for publication in JHE

Accessing directly the properties of fundamental scalars in the confinement and Higgs phase

The properties of elementary particles are encoded in their respective propagators and interaction vertices. For a SU(2) gauge theory coupled to a doublet of fundamental complex scalars these propagators are determined in both the Higgs phase and the confinement phase and compared to the Yang-Mills case, using lattice gauge theory. Since the propagators are gauge-dependent, this is done in the Landau limit of 't Hooft gauge, permitting to also determine the ghost propagator. It is found that neither the gauge boson nor the scalar differ qualitatively in the different cases. In particular, the gauge boson acquires a screening mass, and the scalar's screening mass is larger than the renormalized mass. Only the ghost propagator shows a significant change. Furthermore, indications are found that the consequences of the residual non-perturbative gauge freedom due to Gribov copies could be different in the confinement and the Higgs phase.Comment: 11 pages, 6 figures, 1 table; v2: one minor error corrected; v3: one appendix on systematic uncertainties added and some minor changes, version to appear in EPJ